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Single-Electron Devices And Circuits In Silicon.
This work reviews research on single-electron devices and circuits in silicon. These devices provide a means to control electronic charge at the one-electron level and are promising systems for the development of few-electron, nanoscale electronic circuits.
| Clasificación: | Libro Electrónico |
|---|---|
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
World Scientific
2009.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 505 | 0 | |a Cover13; -- Contents -- Preface -- 1. Introduction -- 1.1 Single-Electron Effects -- 1.2 Early Observations of Single-Electron Effects -- 1.3 Basic Single-Electron Devices -- 1.3.1 Single-electron transistor. -- 1.3.2 Single-electron box -- 1.3.3 Multiple-tunnel junction -- 1.4 Scope of This Book -- 1.4.1 Introduction to subsequent chapters -- 2. Single-Electron Charging Effects -- 2.1 Introduction -- 2.2 Single Tunnel Junction -- 2.3 The Single-Electron Box. -- 2.3.1 The 8216;critical charge. -- 2.3.2 Electrostatic energy changes -- 2.3.3 Energy diagram for the single-electron box. -- 2.4 The Single-Electron Transistor -- 2.4.1 Electrostatic energy changes -- 2.4.2 Tunnelling rates. -- 2.4.3 Offset charge -- 2.4.4 Calculation of I-V characteristics. -- 2.4.5 The Coulomb staircase -- 2.4.6 Energy band diagrams -- 2.5 Quantum Dots -- 2.5.1 Coulomb oscillations in quantum dots. -- 2.6 The Multiple-Tunnel Junction -- 3. Single-Electron Transistors in Silicon -- 3.1 Early Observations -- 3.2 SETs in Crystalline Silicon -- 3.2.1 SETs with lithographically defined islands -- 3.2.2 SETs using MOSFET structures -- 3.2.3 Crystalline silicon nanowire SETs -- 3.2.4 Room temperature Coulomb oscillations with large peak-to- valley ratio -- 3.2.5 Fabrication and characterization of nanowire SETs -- 3.3 Single-Electron Transistors in Nanocrystalline Silicon -- 3.3.1 Conduction in continuous nanocrystalline silicon films -- 3.3.2 Nanocrystalline silicon nanowire SETs -- 3.3.3 Point-contact nc-Si SET: Room temperature operation. -- 3.3.4 8216;Grain-boundary engineering -- 3.3.5 SETs using discrete silicon nanocrystals -- 3.3.6 Comparison with crystalline silicon SETs. -- 3.3.7 Electron coupling effects in nanocrystalline silicon -- 3.4 Single-Electron Effects in Grown Si Nanowires and Nanochains. -- 4. Single-Electron Memory -- 4.1 Introduction -- 4.1.1 Multiple-tunnel junction memory. -- 4.2 MTJ Memories in Silicon. -- 4.2.1 The single-electron detector. -- 4.3 Single- and Few-Electron Memories with Floating Gates -- 4.4 Large-scale Integrated Single-Electron Memory in Nanocrystalline Silicon -- 4.5 Few-Electron Memory with Integrated SET/MOSFET -- 4.5.1 Silicon nanowire SETs for L-SEM application -- 4.5.2 Single-gate L-SEM -- 4.5.3 Split-gate L-SEM -- 4.5.4 L-SEM 3 215; 3 cell array. -- 5. Few-Electron Transfer Devices -- 5.1 Introduction -- 5.2 Single-Electron Turnstiles and Pumps -- 5.2.1 Single-electron turnstile -- 5.2.2 Single-electron pump -- 5.2.3 Single-electron pump and turnstile using a semiconductor quantum dot -- 5.3 Few-Electron Devices using MTJs. -- 5.3.1 Operation of single r.f. signal MTJ electron pump. -- 5.3.2 Single r.f. signal MTJ electron pumps in GaAs -- 5.3.3 Single r.f. signal MTJ electron pumps in silicon -- 5.3.4 MTJ electron pump with multi-phase r.f. signals. -- 5.4 Single-Electron Transfer Devices in Silicon -- 5.4.1 Single-electron transfer using a CCD -- 5.4.2 SET/MOSFET single-electron pump and turnstile -- 5.5 Metrological Applications -- 6. Single-Electron Logic Circuits -- 6.1 Introduction -- 6.2 Voltage State Logic -- 6.2.1 SET inverter with resistive load -- 6.2.2 Complementary SET inverter -- 6.2.3 Complementary SET NAND and NOR gates -- 6.2.4 Programmable SET logic -- 6.2.5 Logic using SETs with multiple input terminals -- 6.2.6 Effe. | |
| 520 | 8 | |a This work reviews research on single-electron devices and circuits in silicon. These devices provide a means to control electronic charge at the one-electron level and are promising systems for the development of few-electron, nanoscale electronic circuits. | |
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Silicon |x Electric properties. | |
| 650 | 0 | |a Electronic apparatus and appliances. | |
| 650 | 0 | |a Nanostructured materials. | |
| 650 | 6 | |a Nanomatériaux. | |
| 650 | 7 | |a Electronic apparatus and appliances |2 fast | |
| 650 | 7 | |a Nanostructured materials |2 fast | |
| 650 | 7 | |a Silicon |x Electric properties |2 fast | |
| 655 | 4 | |a Electronic resource. | |
| 720 | |a Durrani Zahid Ali Khan. | ||
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=1681717 |z Texto completo |
| 938 | |a Askews and Holts Library Services |b ASKH |n AH24682629 | ||
| 938 | |a EBL - Ebook Library |b EBLB |n EBL1681717 | ||
| 938 | |a ProQuest MyiLibrary Digital eBook Collection |b IDEB |n 275994 | ||
| 994 | |a 92 |b IZTAP | ||