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Electroceramics : production, properties, and microstructures /

Proceedings of the Symposium held as part of the Condensed Matter and Materials Conference in 1993. Contents include: ferroelectric thin films for integrated device applications; effect of thermal processing conditions on the structure and properties of sol-gel derived PZT thin layers; citrate gel-r...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autores Corporativos: Institute of Ceramics (Great Britain), Institute of Materials (London, England)
Otros Autores: Bell, A., Lee, W. E.
Formato: Electrónico eBook
Idioma:Inglés
Publicado: London : Institute of Materials, ©1994.
Colección:British ceramic proceedings ; no. 52.
Book (Institute of Materials (London, England)) ; 564.
Temas:
Acceso en línea:Texto completo

MARC

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245 0 0 |a Electroceramics :  |b production, properties, and microstructures /  |c edited by W.E. Lee and A. Bell. 
260 |a London :  |b Institute of Materials,  |c ©1994. 
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490 1 |a British ceramic proceedings ;  |v no. 52 
490 1 |a Book ;  |v 564 
504 |a Includes bibliographical references and indexes. 
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505 0 |a Introductory Statement; The Influence of Crystal Chemistry on the Ferroelectric and Piezoelectric Properties of Perovskite Ceramics; Influence of Structural Defects on Properties of Zirconium Titanate Based Microwave Ceramics; Simulation of the Dielectric Function of Pb(Mg1/3Nb2/3)O3 from the Superparaelectric Model; Chemical Synthesis and Processing of Bismuth Titanate (Bi4Ti3O12)Electroceramics in Thin-Layer Form by a Sol-Gel Method; Sol-Gel Ferroelectric PZT Thin Films for Non-Volatile Memory Applications. 
520 |a Proceedings of the Symposium held as part of the Condensed Matter and Materials Conference in 1993. Contents include: ferroelectric thin films for integrated device applications; effect of thermal processing conditions on the structure and properties of sol-gel derived PZT thin layers; citrate gel-route processing of ZnO varistors; development and evaluation of oxide cathodes for ceramic fuel cell operation at intermediate temperatures; monitoring the integrity of MOS gate oxides. 
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650 0 |a Ceramic materials  |v Congresses. 
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