III-V compound semiconductors : integration with silicon-based microelectronics /

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Part I: Basic Physical and Chemical PropertiesFundamentals and the Future of Semiconductor Device Technology, M. MastroThe Challenge of III-V Materials Integration with Si Microelectronics, T. Li Part II: GaN and Related Alloys on Silicon Growth and Integration TechniquesIII-Nitrides on Si Substrate...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Li, Tingkai, Mastro, Michael A., 1975-, Dadgar, Armin
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Boca Raton, FL : CRC Press, ©2011.
Temas:
Compound semiconductors.
Composés semi-conducteurs.
TECHNOLOGY & ENGINEERING > Electronics > Solid State.
TECHNOLOGY & ENGINEERING > Electronics > Semiconductors.
Compound semiconductors
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Front cover
  • Contents
  • Preface
  • Contributors
  • Part I. Technical Fundamentals and Challenges
  • Chapter 1. Fundamentals and the Future of Semiconductor Device Technology
  • Chapter 2. Challenge of III-V Materials Integration with Si Microelectronics
  • Chapter 3. III-Nitrides on Si Substrates
  • Chapter 4. New Technology Approaches
  • Chapter 5. Group III-A Nitrides on Si: Stress and Microstructural Evolution
  • Chapter 6. Direct Growth of III-V Devices on Silicon
  • Chapter 7. Optoelectronic Devices Integrated on Si
  • Chapter 8. Reliability of III-V Electronic Devices
  • Chapter 9. In Situ Curvature Measurements, Strains, and Stresses in the Case of Large Wafer Bending and Multilayer Systems
  • Chapter 10. X-Ray Characterization of Group III-Nitrides
  • Chapter 11. Luminescence in GaN
  • Chapter 12. GaN-Based Optical Devices on Silicon
  • Chapter 13. Conventional III-V Materials and Devices on Silicon
  • Chapter 14. III-V Solar Cells on Silicon
  • Back cover.

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