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110103s2011 flua ob 001 0 eng d |
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|a UAMI
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|a III-V compound semiconductors :
|b integration with silicon-based microelectronics /
|c edited by Tingkai Li, Michael Mastro, Armin Dadgar.
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|a 3-5 compound semiconductors
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|a Three-five compound semiconductors
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|a Boca Raton, FL :
|b CRC Press,
|c ©2011.
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|a 1 online resource (x, 593 pages) :
|b illustrations
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|a text
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|a Includes bibliographical references and index.
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|a Print version record.
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|a Front cover -- Contents -- Preface -- Contributors -- Part I. Technical Fundamentals and Challenges -- Chapter 1. Fundamentals and the Future of Semiconductor Device Technology -- Chapter 2. Challenge of III-V Materials Integration with Si Microelectronics -- Chapter 3. III-Nitrides on Si Substrates -- Chapter 4. New Technology Approaches -- Chapter 5. Group III-A Nitrides on Si: Stress and Microstructural Evolution -- Chapter 6. Direct Growth of III-V Devices on Silicon -- Chapter 7. Optoelectronic Devices Integrated on Si -- Chapter 8. Reliability of III-V Electronic Devices -- Chapter 9. In Situ Curvature Measurements, Strains, and Stresses in the Case of Large Wafer Bending and Multilayer Systems -- Chapter 10. X-Ray Characterization of Group III-Nitrides -- Chapter 11. Luminescence in GaN -- Chapter 12. GaN-Based Optical Devices on Silicon -- Chapter 13. Conventional III-V Materials and Devices on Silicon -- Chapter 14. III-V Solar Cells on Silicon -- Back cover.
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|a Part I: Basic Physical and Chemical PropertiesFundamentals and the Future of Semiconductor Device Technology, M. MastroThe Challenge of III-V Materials Integration with Si Microelectronics, T. Li Part II: GaN and Related Alloys on Silicon Growth and Integration TechniquesIII-Nitrides on Si Substrate, J. Li, J.Y. Lin, H. Jiang, and N. SawakiNew Technology Approaches, A. Dadgar Part III: III-V Materials and Device Integration Processes with Si MicroelectronicsGroup III-A Nitrides on Si: Stress and Microstructural Evolution, S. Raghavan and J.M. RedwingDirect Growth of III-V Devices on Silicon, T. Kazior, K.J. Herrick, and J. LaRocheOptoelectronic Device Integrated on Si, Di Liang and J.E. BowersReliability of III-V Electronic Devices, A.A. Immorlica, Jr. Part IV: Defect and Properties Evaluation and CharacterizationIn Situ Curvature Measurements, Strains, and Stresses in the Case of Large Wafer Bending and Multilayer Systems, R. Clos and A. KrostX-Ray Characterization of Group III-Nitrides, A. Krost and J. BläsingLuminescence in GaN, F. Bertram Part V: Device Structures and PropertiesGaN-Based Optical Devices on Silicon, A. DadgarThe Conventional III-V Materials and Devices on Silicon, E.Y. ChangIII-V Solar Cells on Silicon, S.A. Ringel and T.J. Grassman.
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|a ProQuest Ebook Central
|b Ebook Central Academic Complete
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|a Compound semiconductors.
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|a Composés semi-conducteurs.
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|a TECHNOLOGY & ENGINEERING
|x Electronics
|x Solid State.
|2 bisacsh
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|a TECHNOLOGY & ENGINEERING
|x Electronics
|x Semiconductors.
|2 bisacsh
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|a Compound semiconductors
|2 fast
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|a Li, Tingkai.
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|a Mastro, Michael A.,
|d 1975-
|1 https://id.oclc.org/worldcat/entity/E39PCjxHphhD96xpBfvM9G3pHd
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|a Dadgar, Armin.
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|i Print version:
|t III-V compound semiconductors.
|d Boca Raton, FL : CRC Press, ©2011
|z 9781439815229
|w (DLC) 2010025720
|w (OCoLC)526111275
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