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III-V compound semiconductors : integration with silicon-based microelectronics /

Part I: Basic Physical and Chemical PropertiesFundamentals and the Future of Semiconductor Device Technology, M. MastroThe Challenge of III-V Materials Integration with Si Microelectronics, T. Li Part II: GaN and Related Alloys on Silicon Growth and Integration TechniquesIII-Nitrides on Si Substrate...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Li, Tingkai, Mastro, Michael A., 1975-, Dadgar, Armin
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Boca Raton, FL : CRC Press, ©2011.
Temas:
Acceso en línea:Texto completo

MARC

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245 0 0 |a III-V compound semiconductors :  |b integration with silicon-based microelectronics /  |c edited by Tingkai Li, Michael Mastro, Armin Dadgar. 
246 3 |a 3-5 compound semiconductors 
246 3 |a Three-five compound semiconductors 
260 |a Boca Raton, FL :  |b CRC Press,  |c ©2011. 
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505 0 |a Front cover -- Contents -- Preface -- Contributors -- Part I. Technical Fundamentals and Challenges -- Chapter 1. Fundamentals and the Future of Semiconductor Device Technology -- Chapter 2. Challenge of III-V Materials Integration with Si Microelectronics -- Chapter 3. III-Nitrides on Si Substrates -- Chapter 4. New Technology Approaches -- Chapter 5. Group III-A Nitrides on Si: Stress and Microstructural Evolution -- Chapter 6. Direct Growth of III-V Devices on Silicon -- Chapter 7. Optoelectronic Devices Integrated on Si -- Chapter 8. Reliability of III-V Electronic Devices -- Chapter 9. In Situ Curvature Measurements, Strains, and Stresses in the Case of Large Wafer Bending and Multilayer Systems -- Chapter 10. X-Ray Characterization of Group III-Nitrides -- Chapter 11. Luminescence in GaN -- Chapter 12. GaN-Based Optical Devices on Silicon -- Chapter 13. Conventional III-V Materials and Devices on Silicon -- Chapter 14. III-V Solar Cells on Silicon -- Back cover. 
520 |a Part I: Basic Physical and Chemical PropertiesFundamentals and the Future of Semiconductor Device Technology, M. MastroThe Challenge of III-V Materials Integration with Si Microelectronics, T. Li Part II: GaN and Related Alloys on Silicon Growth and Integration TechniquesIII-Nitrides on Si Substrate, J. Li, J.Y. Lin, H. Jiang, and N. SawakiNew Technology Approaches, A. Dadgar Part III: III-V Materials and Device Integration Processes with Si MicroelectronicsGroup III-A Nitrides on Si: Stress and Microstructural Evolution, S. Raghavan and J.M. RedwingDirect Growth of III-V Devices on Silicon, T. Kazior, K.J. Herrick, and J. LaRocheOptoelectronic Device Integrated on Si, Di Liang and J.E. BowersReliability of III-V Electronic Devices, A.A. Immorlica, Jr. Part IV: Defect and Properties Evaluation and CharacterizationIn Situ Curvature Measurements, Strains, and Stresses in the Case of Large Wafer Bending and Multilayer Systems, R. Clos and A. KrostX-Ray Characterization of Group III-Nitrides, A. Krost and J. BläsingLuminescence in GaN, F. Bertram Part V: Device Structures and PropertiesGaN-Based Optical Devices on Silicon, A. DadgarThe Conventional III-V Materials and Devices on Silicon, E.Y. ChangIII-V Solar Cells on Silicon, S.A. Ringel and T.J. Grassman. 
590 |a ProQuest Ebook Central  |b Ebook Central Academic Complete 
650 0 |a Compound semiconductors. 
650 6 |a Composés semi-conducteurs. 
650 7 |a TECHNOLOGY & ENGINEERING  |x Electronics  |x Solid State.  |2 bisacsh 
650 7 |a TECHNOLOGY & ENGINEERING  |x Electronics  |x Semiconductors.  |2 bisacsh 
650 7 |a Compound semiconductors  |2 fast 
700 1 |a Li, Tingkai. 
700 1 |a Mastro, Michael A.,  |d 1975-  |1 https://id.oclc.org/worldcat/entity/E39PCjxHphhD96xpBfvM9G3pHd 
700 1 |a Dadgar, Armin. 
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