Transistors : types, materials, and applications /
Clasificación: | Libro Electrónico |
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Otros Autores: | |
Formato: | Electrónico eBook |
Idioma: | Inglés |
Publicado: |
Hauppauge, N.Y. :
Nova Science Publishers,
[2010]
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Colección: | Electrical engineering developments series.
|
Temas: | |
Acceso en línea: | Texto completo |
Tabla de Contenidos:
- TRANSISTORS: TYPES, MATERIALS AND APPLICATIONS
- TRANSISTORS: TYPES, MATERIALS AND APPLICATIONS
- CONTENTS
- PREFACE
- CARBON NANOMATERIAL TRANSISTORSAND CIRCUITS
- Abstract
- Introduction
- I. Carbon Nanomaterials
- A. Atomic Composition
- B. Physical Properties
- C. Electrical Properties
- II. Carbon Nanotube FETs (CNFETs)
- A. General
- B. Transistor Types
- III. Graphene Nanoribbon FETs (GNRFETs)
- IV. Modeling
- A. CNFET Modeling
- 1. SPICE Compatible MOSFET Models
- 2. SBFET Models
- B. GNRFET Modeling
- V. Logic Gates and Circuit StructuresA. CNFET Logic Structures
- B. GNRFET Logic Structures
- C. Circuit Structures
- VI. Challenges and Opportunities
- VII. Conclusion
- Acknowledgment
- References
- ELECTRONIC PROPERTIES AND SELF CONSISTENTSIMULATIONS OF CARBON NANOTUBESIN TRANSISTOR TECHNOLOGY
- Abstract
- 1. Introduction
- 2. Physical Properties and Classification of Carbon Nanotubes
- 2.1. Properties of Graphene Structure
- 2.2. Properties of Carbon Nanotubes
- 2.3. Electron Wavefunctions in Carbon Nanotubes
- 3. Calculation of Electronic Properties of Carbon Nanotubes3.1. Transmission Spectrum and Current Calculation of Nano�ScaledDevices Using Landauer�s Formula
- 3.2. Non-equilibrium Green�s Function Formalism for Realistic Calculationof Current-Voltage Relationships of Carbon Nanotubes
- 3.3. Density Functional Theory for the Calculation of the ElectronDensity�Potential Relationship in Carbon Nanotube Devices
- 3.4. DFT�NEGF Simulations of Example Nanotubes
- 3.4.1. Simulations of Semiconductor Nanotubes
- 3.4.2. Simulations of Metallic Nanotubes
- 4. Carbon Nanotube Field Effect Transistors, Review of TheirEquivalent Circuit Models and Experimental Applications5. Conclusion
- References
- NANOWIRE FIELD-EFFECT TRANSISTORS
- Abstract
- 1. Introduction
- 2. Brief Introduction to Nanowire Electronics
- 3. Typical 1-D Nanostructures
- 3.1. Nanorods
- 3.2. Nanowires
- 3.3. Nanotubes
- 3.4. Nanobelts
- 3.5. 1-D nanoscale Heterostructures
- 4. Application of Nanowire Transistors
- 4.1. Sensors
- 4.2. Light-Emitting Diodes and Nanolasers
- 4.3. Single Nanowire Solar Cells
- 4.4. Transparent Electronics 5. Conclusion
- Acknowledgments
- References
- OPERATING CHARACTERISTICS OF MOSFETSIN CHAOTIC OSCILLATORS
- Abstract
- Introduction
- Linear Operations
- Nonlinear Operators: PWL Functions
- Chaotic Oscillators Design: Chua�s Circuit
- Chaotic Synchronization and Encryption
- Conclusion
- Acknowledgments
- References
- ONTHEVARIATIONALINEQUALITIESAPPROACHTOSTUDYELECTRICALCIRCUITSWITHTRANSISTORS
- Abstract
- 1. Introduction
- 2. Set-valuedAmpere-VoltCharacteristics
- 2.1. DiodeModels