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|2 22
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|a UAMI
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|a Transistors :
|b types, materials, and applications /
|c Benjamin M. Fitzgerald, editor.
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|a Hauppauge, N.Y. :
|b Nova Science Publishers,
|c [2010]
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|c ©2010
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|a 1 online resource.
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|a text
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|a Electrical engineering developments
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|a Includes bibliographical references and index.
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|a Description based on print version record.
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|a TRANSISTORS: TYPES, MATERIALS AND APPLICATIONS -- TRANSISTORS: TYPES, MATERIALS AND APPLICATIONS -- CONTENTS -- PREFACE -- CARBON NANOMATERIAL TRANSISTORSAND CIRCUITS -- Abstract -- Introduction -- I. Carbon Nanomaterials -- A. Atomic Composition -- B. Physical Properties -- C. Electrical Properties -- II. Carbon Nanotube FETs (CNFETs) -- A. General -- B. Transistor Types -- III. Graphene Nanoribbon FETs (GNRFETs) -- IV. Modeling -- A. CNFET Modeling -- 1. SPICE Compatible MOSFET Models -- 2. SBFET Models -- B. GNRFET Modeling
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|a V. Logic Gates and Circuit StructuresA. CNFET Logic Structures -- B. GNRFET Logic Structures -- C. Circuit Structures -- VI. Challenges and Opportunities -- VII. Conclusion -- Acknowledgment -- References -- ELECTRONIC PROPERTIES AND SELF CONSISTENTSIMULATIONS OF CARBON NANOTUBESIN TRANSISTOR TECHNOLOGY -- Abstract -- 1. Introduction -- 2. Physical Properties and Classification of Carbon Nanotubes -- 2.1. Properties of Graphene Structure -- 2.2. Properties of Carbon Nanotubes -- 2.3. Electron Wavefunctions in Carbon Nanotubes
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|a 3. Calculation of Electronic Properties of Carbon Nanotubes3.1. Transmission Spectrum and Current Calculation of Nano�ScaledDevices Using Landauer�s Formula -- 3.2. Non-equilibrium Green�s Function Formalism for Realistic Calculationof Current-Voltage Relationships of Carbon Nanotubes -- 3.3. Density Functional Theory for the Calculation of the ElectronDensity�Potential Relationship in Carbon Nanotube Devices -- 3.4. DFT�NEGF Simulations of Example Nanotubes -- 3.4.1. Simulations of Semiconductor Nanotubes -- 3.4.2. Simulations of Metallic Nanotubes
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|a 4. Carbon Nanotube Field Effect Transistors, Review of TheirEquivalent Circuit Models and Experimental Applications5. Conclusion -- References -- NANOWIRE FIELD-EFFECT TRANSISTORS -- Abstract -- 1. Introduction -- 2. Brief Introduction to Nanowire Electronics -- 3. Typical 1-D Nanostructures -- 3.1. Nanorods -- 3.2. Nanowires -- 3.3. Nanotubes -- 3.4. Nanobelts -- 3.5. 1-D nanoscale Heterostructures -- 4. Application of Nanowire Transistors -- 4.1. Sensors -- 4.2. Light-Emitting Diodes and Nanolasers -- 4.3. Single Nanowire Solar Cells
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|a 4.4. Transparent Electronics 5. Conclusion -- Acknowledgments -- References -- OPERATING CHARACTERISTICS OF MOSFETSIN CHAOTIC OSCILLATORS -- Abstract -- Introduction -- Linear Operations -- Nonlinear Operators: PWL Functions -- Chaotic Oscillators Design: Chua�s Circuit -- Chaotic Synchronization and Encryption -- Conclusion -- Acknowledgments -- References -- ONTHEVARIATIONALINEQUALITIESAPPROACHTOSTUDYELECTRICALCIRCUITSWITHTRANSISTORS -- Abstract -- 1. Introduction -- 2. Set-valuedAmpere-VoltCharacteristics -- 2.1. DiodeModels
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546 |
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|a English.
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|a ProQuest Ebook Central
|b Ebook Central Academic Complete
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590 |
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|a eBooks on EBSCOhost
|b EBSCO eBook Subscription Academic Collection - Worldwide
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|a Transistors.
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|a Transistors.
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|a transistors.
|2 aat
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|a TECHNOLOGY & ENGINEERING
|x Electronics
|x Transistors.
|2 bisacsh
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|a Transistors
|2 fast
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|a Fitzgerald, Benjamin M.
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758 |
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|i has work:
|a Transistors (Text)
|1 https://id.oclc.org/worldcat/entity/E39PCY4DxxMCqjj3KyWF9f6Tvw
|4 https://id.oclc.org/worldcat/ontology/hasWork
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|t Transistors
|z 9781616689087 (hardcover)
|w (DLC) 2010014117
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830 |
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|a Electrical engineering developments series.
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