MOSFET modeling for circuit analysis and design /

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This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Galup-Montoro, Carlos
Otros Autores: Schneider, Márcio Cherem
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Singapore ; Hackensack, NJ : World Scientific, ©2007.
Colección:International series on advances in solid state electronics and technology.
Temas:
Metal oxide semiconductor field-effect transistors > Mathematical models.
Field-effect transistors > Mathematical models.
Transistors MOSFET > Modèles mathématiques.
Transistors à effet de champ > Modèles mathématiques.
TECHNOLOGY & ENGINEERING > Electronics > Transistors.
Field-effect transistors > Mathematical models
Metal oxide semiconductor field-effect transistors > Mathematical models
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension.

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