MOSFET modeling for circuit analysis and design /

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This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Galup-Montoro, Carlos
Otros Autores: Schneider, Márcio Cherem
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Singapore ; Hackensack, NJ : World Scientific, ©2007.
Colección:International series on advances in solid state electronics and technology.
Temas:
Metal oxide semiconductor field-effect transistors > Mathematical models.
Field-effect transistors > Mathematical models.
Transistors MOSFET > Modèles mathématiques.
Transistors à effet de champ > Modèles mathématiques.
TECHNOLOGY & ENGINEERING > Electronics > Transistors.
Field-effect transistors > Mathematical models
Metal oxide semiconductor field-effect transistors > Mathematical models
Acceso en línea:Texto completo
Descripción
Sumario:This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact ex.
Descripción Física:1 online resource (xxiv, 418 pages) : illustrations
Bibliografía:Includes bibliographical references and index.
ISBN:9789812707598
981270759X

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