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Mixed analog-digital VLSI devices and technology /
Improve your circuit-design potential with this expert guide to the devices and technology used in mixed analog-digital VLSI chips for such high-volume applications as hard-disk drives, wireless telephones, and consumer electronics. The book provides you with a critical understanding of device model...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Singapore ; River Edge, N.J. :
World Scientific,
©2002.
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| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 100 | 1 | |a Tsividis, Yannis. | |
| 245 | 1 | 0 | |a Mixed analog-digital VLSI devices and technology / |c Yannis Tsividis. |
| 260 | |a Singapore ; |a River Edge, N.J. : |b World Scientific, |c ©2002. | ||
| 300 | |a 1 online resource (x, 284 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Preface; Chapter 1. Introduction: Mixed Analog-Digital Chips; 1.1 The Role and Place of Modern Mixed Analog-Digital Chips; 1.2 Advantages of Mixing Analog and Digital Circuits on the Same Chip; 1.3 Applications of MAD Chips; 1.4 Obstacles in the Design of MAD Chips; 1.5 The Aim and Contents of This Book; Chapter 2. The MOSFET: Introduction and Qualitative View; 2.1 Introduction; 2.2 MOS Transistor Structure; 2.3 Assumptions about Terminal Voltages Currents and Temperature; 2.4 A Qualitative Description of MOSFET Operation; 2.4.1 Effect of VGS: Level of Inversion. | |
| 505 | 8 | |a 2.4.2 Effect of VSB: The Body Effect2.4.3 Effect of VDS: Drain Current; 2.5 A Fluid Dynamical Analog; 2.6 Complete Set of Characteristics; 2.7 Form of Functional lD-VGS Dependence: Practical Limits for Regions of Inversion; 2.8 Factors Affecting the Extrapolated Threshold Voltage; 2.9 Other Factors Affecting the Drain Current; Chapter 3. MOSFET DC Modeling; 3.1 Introduction; 3.2 DC Model for Weak and for Strong Inversion; 3.2.1 The Current Equations; 3.2.2 Model Parameters Influenced by the Body Effect; 3.2.3 Origin and Validity of the Model; 3.3 Drain versus Source; 3.4 Symmetric Models. | |
| 505 | 8 | |a 3.5 General Models and Moderate Inversion3.6 Mobility Dependence on Gate and Substrate Bias; 3.7 Temperature Effects; 3.8 Small-Dimension Effects; 3.9 Breakdown; 3.10 The pMOS Transistor; 3.11 Device Symbols; 3.12 Model Accuracy Parameter Extraction and Computer Simulation; Chapter 4. MOSFET Small-Signal Modeling; 4.1 Introduction; 4.2 Small-Signal Conductance Parameters; 4.3 Expressions for Small-Signal Conductance Parameters in Weak and in Strong Inversion; 4.3.1 Gate Transconductance; 4.3.2 Body Transconductance; 4.3.3 Drain-Source Conductance; 4.3.4 Drain-Substrate Conductance. | |
| 505 | 8 | |a 4.3.5 Examples4.3.6 Small-Signal Parameters in the Presence of Second-Order Effects; 4.4 Capacitance Parameters; 4.4.1 Extrinsic Capacitances; 4.4.2 Intrinsic Capacitances in Weak and in Strong Inversion; 4.5 Intrinsic Cutoff Frequency and Limits of Model Validity; 4.6 The Transistor at Very High Frequencies; 4.6.1 Extrinsic Parasitic Resistances; 4.6.2 Intrinsic Nonquasi-static Effects; 4.7 Noise; 4.7.1 Introductory Remarks; 4.7.2 MOS Transistor Noise; 4.8 General Models and Moderate Inversion; 4.9 Parameter Extraction for Accurate Small-Signal Modeling; 4.10 Requirements for Good CAD Models. | |
| 505 | 8 | |a Chapter 5. Technology and Available Circuit Components5.1 Introduction; 5.2 The n-Well CMOS Process; 5.2.1 Basic Fabrication Steps and MOS Transistor Structures; 5.2.2 Capacitors; 5.2.3 Resistors; 5.2.4 Inductors; 5.2.5 Bipolar Transistors; 5.2.6 Interconnects; 5.2.7 Electrical Parameters; 5.2.8 Input Protection; 5.2.9 Latch-up; 5.3 BiCMOS Processes; 5.3.1 Adding High-Performance Bipolar Transistors to CMOS; 5.3.2 Bipolar Transistor Models; 5.4 Other Silicon Processes; 5.5 Sensors; 5.6 Trimming; 5.7 Tolerance and Matching of Electrical Parameters; 5.8 Chip Size and Yield. | |
| 520 | |a Improve your circuit-design potential with this expert guide to the devices and technology used in mixed analog-digital VLSI chips for such high-volume applications as hard-disk drives, wireless telephones, and consumer electronics. The book provides you with a critical understanding of device models, fabrication technology, and layout as they apply to mixed analog-digital circuits. You will learn about the many device-modeling requirements for analog work, as well as the pitfalls in models used today for computer simulators such as Spice. Also included is information on fabrication technologi. | ||
| 546 | |a English. | ||
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Integrated circuits |x Very large scale integration |x Design and construction. | |
| 650 | 0 | |a Integrated circuits |x Very large scale integration |x Mathematical models. | |
| 650 | 0 | |a Mixed signal circuits. | |
| 650 | 6 | |a Circuits intégrés à très grande échelle |x Modèles mathématiques. | |
| 650 | 6 | |a Circuits à signaux mixtes. | |
| 650 | 7 | |a Integrated circuits |x Very large scale integration |x Design and construction |2 fast | |
| 650 | 7 | |a Integrated circuits |x Very large scale integration |x Mathematical models |2 fast | |
| 650 | 7 | |a Mixed signal circuits |2 fast | |
| 655 | 4 | |a Computer network resources. | |
| 758 | |i has work: |a Mixed analog-digital VLSI devices and technology (Text) |1 https://id.oclc.org/worldcat/entity/E39PCGmtbXPjtBjjckcrQWdh9C |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 0 | 8 | |i Print version: |a Tsividis, Yannis. |t Mixed Analog-Digital Vlsi Devices and Technology. |d Singapore : World Scientific Publishing Company, ©2002 |z 9789812381118 |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=1681637 |z Texto completo |
| 938 | |a EBL - Ebook Library |b EBLB |n EBL1681637 | ||
| 938 | |a ebrary |b EBRY |n ebr10201308 | ||
| 994 | |a 92 |b IZTAP | ||