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The physics and modeling of MOSFETS : surface-potential model HiSIM /
This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm M...
| Clasificación: | Libro Electrónico |
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| Autores principales: | , , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Singapore ; Hackensack, N.J. :
World Scientific Pub.,
©2008.
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| Colección: | International series on advances in solid state electronics and technology.
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| Temas: | |
| Acceso en línea: | Texto completo |
| Sumario: | This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation. |
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| Notas: | Title from title screen. |
| Descripción Física: | 1 online resource (xxii, 352 pages) : illustrations. |
| Bibliografía: | Includes bibliographical references and index. |
| ISBN: | 9812812059 9789812812056 1281960896 9781281960894 9786611960896 6611960899 |