Ultrafast All-Optical Signal Processing Devices.

Semiconductor-based Ultra-Fast All-Optical Signal Processing Devices a key technology for the next generation of ultrahigh bandwidth optical communication systems!. The introduction of ultra-fast communication systems based on all-optical signal processing is considered to be one of the most promisi...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Ishikawa, Dr. Hiroshi
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Chichester : John Wiley & Sons, 2008.
Temas:
Integrated optics.
Optical data processing.
Optoelectronic devices.
Signal processing > Equipment and supplies.
Very high speed integrated circuits.
Optique intégrée.
Traitement optique de l'information.
Dispositifs optoélectroniques.
Traitement du signal > Appareils et matériel.
Circuits intégrés à très grande vitesse.
Integrated optics
Optical data processing
Optoelectronic devices
Signal processing > Equipment and supplies
Very high speed integrated circuits
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Contributors ix
  • Preface xi
  • 1 Introduction 1 /Hiroshi Ishikawa
  • 1.1 Evolution of Optical Communication Systems and Device Technologies 1
  • 1.2 Increasing Communication Traffic and Power Consumption 2
  • 1.3 Future Networks and Technologies 4
  • 1.3.1 Future Networks 4
  • 1.3.2 Schemes for Huge Capacity Transmission 5
  • 1.4 Ultrafast All-Optical Signal Processing Devices 6
  • 1.4.1 Challenges 6
  • 1.4.2 Basics of the Nonlinear Optical Process 7
  • 1.5 Overview of the Devices and Their Concepts 11
  • 1.6 Summary 13
  • References 13
  • 2 Light Sources 15 /Yoh Ogawa and Hitoshi Murai
  • 2.1 Requirement for Light Sources 15
  • 2.1.1 Optical Short Pulse Source 16
  • 2.1.2 Optical Time Division Multiplexer 19
  • 2.2 Mode-locked Laser Diodes 20
  • 2.2.1 Active Mode Locking 20
  • 2.2.2 Passive Mode Locking 23
  • 2.2.3 Hybrid Mode Locking 25
  • 2.2.4 Optical Synchronous Mode Locking 27
  • 2.2.5 Application for Clock Extraction 29
  • 2.3 Electro-absorption Modulator Based Signal Source 30
  • 2.3.1 Overview of Electro-absorption Modulator 30
  • 2.3.2 Optical Short Pulse Generation Using EAM 33
  • 2.3.3 Optical Time Division Multiplexer Based on EAMs 38
  • 2.3.4 160-Gb/s Optical Signal Generation 41
  • 2.3.5 Detection of a 160-Gb/s OTDM Signal 43
  • 2.3.6 Transmission Issues 46
  • 2.4 Summary 47
  • References 47
  • 3 Semiconductor Optical Amplifier Based Ultrafast Signal Processing Devices 53 /Hidemi Tsuchida and Shigeru Nakamura
  • 3.1 Introduction 53
  • 3.2 Fundamentals of SOA 53
  • 3.3 SOA as an Ultrafast Nonlinear Medium 56
  • 3.4 Use of Ultrafast Response Component by Filtering 57
  • 3.4.1 Theoretical Background 57
  • 3.4.2 Signal Processing Using the Fast Response Component of SOA 60
  • 3.5 Symmetric Mach / Zehnder (SMZ) All-Optical Gate 64
  • 3.5.1 Fundamentals of the SMZ All-Optical Gate 64
  • 3.5.2 Technology of Integrating Optical Circuits for an SMZ All-Optical Gate 67
  • 3.5.3 Optical Demultiplexing 68
  • 3.5.4 Wavelength Conversion and Signal Regeneration 73.
  • 3.6 Summary 83
  • References 83
  • 4 Uni-traveling-carrier Photodiode (UTC-PD) and PD-EAM Optical Gate Integrating a UTC-PD and a TravelingWave Electro-absorption Modulator 89 /Hiroshi Ito and Satoshi Kodama
  • 4.1 Introduction 89
  • 4.2 Uni-traveling-carrier Photodiode (UTC-PD) 91
  • 4.2.1 Operation 91
  • 4.2.2 Fabrication and Characterization 96
  • 4.2.3 Characteristics of the UTC-PD 98
  • 4.2.4 Photo Receivers 114
  • 4.3 Concept of a New Opto-electronic Integrated Device 117
  • 4.3.1 Importance of High-output PDs 117
  • 4.3.2 Monolithic Digital OEIC 118
  • 4.3.3 Monolithic PD-EAM Optical Gate 118
  • 4.4 PD-EAM Optical Gate Integrating UTC-PD and TW-EAM 119
  • 4.4.1 Basic Structure 119
  • 4.4.2 Design 120
  • 4.4.3 Optical Gating Characteristics of PD-EAM 123
  • 4.4.4 Fabrication 125
  • 4.4.5 Gating Characteristics 127
  • 4.4.6 Applications for Ultrafast All-Optical Signal Processing 131
  • 4.4.7 Future Work 143
  • 4.5 Summary and Prospects 147
  • References 148
  • 5 Intersub-band Transition All-Optical Gate Switches 155 /Nobuo Suzuki, Ryoichi Akimoto, Hiroshi Ishikawa and Hidemi Tsuchida
  • 5.1 Operation Principle 155
  • 5.1.1 Transition Wavelength 156
  • 5.1.2 Matrix Element 157
  • 5.1.3 Saturable Absorption 157
  • 5.1.4 Absorption Recovery Time 158
  • 5.1.5 Dephasing Time and Spectral Linewidth 160
  • 5.1.6 Gate Operation in Waveguide Structure 162
  • 5.2 GaN/AlN ISBT Gate 164
  • 5.2.1 Absorption Spectra 165
  • 5.2.2 Saturation of Absorption in Waveguides 168
  • 5.2.3 Ultrafast Optical Gate 170
  • 5.3 (CdS/ZnSe)/BeTe ISBT Gate 172
  • 5.3.1 Growth of CdS/ ZnSe/ BeTe QWs and ISBT Absorption Spectra 173
  • 5.3.2 Waveguide Structure for a CdS/ ZnSe/ BeTe Gate 177
  • 5.3.3 Characteristics of a CdS/ ZnSe/ BeTe Gate 181
  • 5.4 InGaAs/AlAs/AlAsSb ISBT Gate 183
  • 5.4.1 Device Structure and its Fabrication 183
  • 5.4.2 Saturation Characteristics and Time Response 184
  • 5.5 Cross-phase Modulation in an InGaAs/AlAs/AlAsSb-based ISBT Gate 186
  • 5.5.1 Cross-phase Modulation Effect and its Mechanisms 187.

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