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Sic Materials And Devices.
Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-k...
| Clasificación: | Libro Electrónico |
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| Autor principal: | |
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Singapore :
World Scientific,
2007.
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| Colección: | Selected Topics in Electronics & Systems, v. 43.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Preface; CONTENTS; Growth of Sic Substrates A. Powell, J. Jenny, S. Muller, H. Mcd. Hobgood, V. Tsvetkov, R. Lenoard and C. Carter, Jr.; 1. Introduction; 2. Sic Bulk Growth; 3. Crystal Orientation; 4. Crystal Diameter Enlargement; 5. Substrate Defects; 6. Doping in SIC; 7. Sic Substrates for Microwave Devices; 8. Wafering and Polish; 9. Substrate Cost; 10. Conclusions; Acknowledgments; References; Deep Level Defects in Silicon Carbide A.A. Lebedev; 1. Introduction; 2. Parameters of Deep Centers in Sic; 3. Influence of Impurities on the Growth of Epitaxial Sic Layers.