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Sic Materials And Devices.
Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-k...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Singapore :
World Scientific,
2007.
|
| Colección: | Selected Topics in Electronics & Systems, v. 43.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 007 | cr mn|---||||| | ||
| 008 | 091207s2007 si o 000 0 eng d | ||
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| 049 | |a UAMI | ||
| 100 | 1 | |a Shur, Michael. | |
| 245 | 1 | 0 | |a Sic Materials And Devices. |
| 260 | |a Singapore : |b World Scientific, |c 2007. | ||
| 300 | |a 1 online resource (143 pages). | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Selected Topics in Electronics & Systems, v. 43 | |
| 520 | |a Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization. This second of two volumes reviews four important additional areas: the growth. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Preface; CONTENTS; Growth of Sic Substrates A. Powell, J. Jenny, S. Muller, H. Mcd. Hobgood, V. Tsvetkov, R. Lenoard and C. Carter, Jr.; 1. Introduction; 2. Sic Bulk Growth; 3. Crystal Orientation; 4. Crystal Diameter Enlargement; 5. Substrate Defects; 6. Doping in SIC; 7. Sic Substrates for Microwave Devices; 8. Wafering and Polish; 9. Substrate Cost; 10. Conclusions; Acknowledgments; References; Deep Level Defects in Silicon Carbide A.A. Lebedev; 1. Introduction; 2. Parameters of Deep Centers in Sic; 3. Influence of Impurities on the Growth of Epitaxial Sic Layers. | |
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Semiconductors. | |
| 650 | 0 | |a Silicon carbide |x Electric properties. | |
| 650 | 2 | |a Semiconductors | |
| 650 | 6 | |a Semi-conducteurs. | |
| 650 | 7 | |a semiconductor. |2 aat | |
| 650 | 7 | |a Semiconductors |2 fast | |
| 650 | 7 | |a Silicon carbide |x Electric properties |2 fast | |
| 650 | 7 | |a Physics. |2 hilcc | |
| 650 | 7 | |a Physical Sciences & Mathematics. |2 hilcc | |
| 650 | 7 | |a Electricity & Magnetism. |2 hilcc | |
| 700 | 1 | |a Rumyantsev, Sergey. | |
| 700 | 1 | |a Levinshtein, Michael. | |
| 758 | |i has work: |a Volume 1 SiC materials and devices (Text) |1 https://id.oclc.org/worldcat/entity/E39PCGdPjmhMpwMbvKbDCWrC33 |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 1 | |z 9789812703835 | |
| 830 | 0 | |a Selected Topics in Electronics & Systems, v. 43. | |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=312269 |z Texto completo |
| 938 | |a ProQuest Ebook Central |b EBLB |n EBL312269 | ||
| 994 | |a 92 |b IZTAP | ||