Cargando…
Radiation Defect Engineering.
The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modifi...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Singapore :
World Scientific,
2005.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
| LEADER | 00000cam a2200000Mu 4500 | ||
|---|---|---|---|
| 001 | EBOOKCENTRAL_ocn476064341 | ||
| 003 | OCoLC | ||
| 005 | 20240329122006.0 | ||
| 006 | m o d | ||
| 007 | cr mn|---||||| | ||
| 008 | 091207s2005 si o 000 0 eng d | ||
| 040 | |a EBLCP |b eng |e pn |c EBLCP |d OCLCQ |d DEBSZ |d OCLCQ |d OCLCO |d YDXCP |d OCLCQ |d OCLCF |d OCLCQ |d ZCU |d MERUC |d U3W |d ICG |d AU@ |d OCLCQ |d DKC |d OCLCQ |d UKAHL |d OCLCQ |d OCLCO |d OCLCQ |d OCLCO |d OCLCL | ||
| 020 | |a 9789812703194 |q (electronic bk.) | ||
| 020 | |a 9812703195 |q (electronic bk.) | ||
| 029 | 1 | |a AU@ |b 000048758421 | |
| 029 | 1 | |a DEBBG |b BV044124745 | |
| 029 | 1 | |a DEBSZ |b 379302454 | |
| 029 | 1 | |a DEBSZ |b 445563664 | |
| 035 | |a (OCoLC)476064341 | ||
| 050 | 4 | |a QC611.6.R3 K69 2005eb | |
| 082 | 0 | 4 | |a 621.38152 |
| 049 | |a UAMI | ||
| 100 | 1 | |a Vitali, Kozlovski. | |
| 245 | 1 | 0 | |a Radiation Defect Engineering. |
| 260 | |a Singapore : |b World Scientific, |c 2005. | ||
| 300 | |a 1 online resource (262 pages) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 520 | |a The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Preface; Contents; 1 Ion-S timulated Processes; 2 Transmutation Doping of Semiconductors by Charged Particles; 3 Doping of Semiconductors Using Radiation Defects; 4 Formation of Buried Porous and Damaged Layers; References; Index. | |
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Semiconductors. | |
| 650 | 2 | |a Semiconductors | |
| 650 | 6 | |a Semi-conducteurs. | |
| 650 | 7 | |a semiconductor. |2 aat | |
| 650 | 7 | |a Semiconductors |2 fast | |
| 700 | 1 | |a Vera, Abrosimova. | |
| 758 | |i has work: |a Radiation defect engineering (Text) |1 https://id.oclc.org/worldcat/entity/E39PCFQv8TfYc3qdjRBvwt6wcq |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 1 | |z 9789812565211 | |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=296228 |z Texto completo |
| 938 | |a Askews and Holts Library Services |b ASKH |n AH24683964 | ||
| 938 | |a EBL - Ebook Library |b EBLB |n EBL296228 | ||
| 938 | |a YBP Library Services |b YANK |n 2507578 | ||
| 994 | |a 92 |b IZTAP | ||