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High Performance Devices - Proceedings Of The 2004 Ieee Lester Eastman Conference.
This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and circuits. A broad coverage of topics relating to high performance devices and circuits is featured here. There are 46 contributed papers cove...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Singapore :
World Scientific,
2005.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 100 | 1 | |a III, Robert E. Leoni. | |
| 245 | 1 | 0 | |a High Performance Devices - Proceedings Of The 2004 Ieee Lester Eastman Conference. |
| 260 | |a Singapore : |b World Scientific, |c 2005. | ||
| 300 | |a 1 online resource (314 pages) | ||
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| 520 | |a This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and circuits. A broad coverage of topics relating to high performance devices and circuits is featured here. There are 46 contributed papers covering a wide range of materials, device types, and applications. These papers describe the results of ongoing research in three general areas: high speed technologies for advanced mixed signal and terahertz applications, advanced technologies for high performance optical links and light sources, and. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Preface; Organizing Committee; Conference Program; CONTENTS; Vertical Scaling of Type I InP HBT with FT> 500 GHz J.W. Lai, W. Hafez and M. Feng; Numerical Investigation of the Effect of Doping Profiles on the High Frequency Performance of InP/InGaAs Super Scaled HBTs D. Veksler, M.S. Shur, V.E. Houtsma, N.G. We.ima.nn and Y.K. Chen; Tunnel Diode/Transistor Differential Comparator Q. Liu, S. Sutar and A. Seabaugh; Benchmark Results for High-Speed 4-Bit Accumulators Implemented in Indium Phosphide DHBT Technology S.E. Turner and D.E. Kotecki. | |
| 505 | 8 | |a Atomically Flat III-Antimonide Epilayers Grown Using Liquid Phase Epitaxy A. Kumar, S. Sridaran and P.S. DuttaNative Defect Compensation in III-Antimonide Bulk Substrates R. Pino, Y. Ko and P.S. Dutta; Noise and THz Rectification Characteristics of Zero-Bias Quantum Tunneling Sb-Heterostructure Diodes A. Luukanen, E.N. Grossman, H.P. Moyer and J.N. Schulman; Temperature Dependence of Terahertz Emission from Silicon Devices Doped with Boron R.T. Troeger, T.N. Adam, S.K. Ray, P.-C. Lv, S. Kim and J. Kolodzey. | |
| 505 | 8 | |a Two-Dimensional Analytical Modeling and Simulation of Retrograde Doped HMG MOSFET R.S. Gupta, K. Gael, M. Saxena and M. GuptaElectrical Effects of DNA Molecules on Silicon Field Effect Transistor G. Xuan, J. Kolodzey, V. Kapoor and G. Gonye; Analysis of Operational Transconductance Amplifier for Application in GHz Frequency Range A. Ghori and P. Ghosh; Lifetime of Nonequilibrium Carriers in AlGaN Epilayers with High Al Molar Fraction J. Mickevicius, R. Aleksiejunas, M.S. Shur, J.P. Zhang, Q. Fareed, R. Gaska and G. Tamulaitis. | |
| 505 | 8 | |a Noise Characteristics of 340 nm and 280 nm GaN-Based Light Emitting Diodes S. Sawyer, S.L. Rumyantsev, N. Pala, M.S. Shur, Y. Bilenko, R. Gaska, P.V. Kosterin and B.M. SalzbergJunction-Temperature Measurements in GaN UV Light-Emitting Diodes using the Diode Forward Voltage Y. Xi and E.F. Schubert; High Speed 0.9 m Lateral P-I-N Photodetectors Fabricated in a Standard Commercial GaAs VLSI Process W.P. Giziewicz, C.G. Fonstad Jr. and S. Prasad; Self-Guiding in Low-Index-Contrast Planar Photonic Crystals C. Chen, Z. Lu, S. Shi and D.W. Prather. | |
| 505 | 8 | |a Omni-Directional Reflector using a Low Refractive Index Material J.-Q. Xi, M. Ojha, W. Cho, Th. Gessmann, E.F. Schubert, J.L. Plawsky and W.N. GillMBE-Grown AlGaN/GaN HEMTs on SiC S. Rajan, A. Chakraborty, U.K. Mishra, C. Poblenz, P. Waltereit and J.S. Speck; Stable High Power GaN-on-GaN HEMT K.K. Chu, P.C. Chao and J.A. Windyka; Thick GaN Layer Grown by Ga Vapor Transport Technique H. Wu, P. Konkapaka, Y. Makarov and M.G. Spencer; Dependence of RF Performance of GaN/AlGaN HEMTs upon AlGaN Barrier Layer Variation E. Faraclas, R.T. Webster, G. Brandes and A.F.M. Anwar. | |
| 546 | |a English. | ||
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Very high speed integrated circuits |v Congresses. | |
| 650 | 0 | |a Integrated circuits |x Very large scale integration |v Congresses. | |
| 650 | 6 | |a Circuits intégrés à très grande vitesse |v Congrès. | |
| 650 | 6 | |a Circuits intégrés à très grande échelle |v Congrès. | |
| 650 | 7 | |a Integrated circuits |x Very large scale integration |2 fast | |
| 650 | 7 | |a Very high speed integrated circuits |2 fast | |
| 655 | 7 | |a Conference papers and proceedings |2 fast | |
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| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=296136 |z Texto completo |
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| 994 | |a 92 |b IZTAP | ||