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Breakdown Phenomena In Semiconductors And Semiconductor Devices.
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to pr...
| Clasificación: | Libro Electrónico |
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| Autor principal: | |
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Singapore :
World Scientific,
2005.
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| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 100 | 1 | |a Levinshtein, Michael. | |
| 245 | 1 | 0 | |a Breakdown Phenomena In Semiconductors And Semiconductor Devices. |
| 260 | |a Singapore : |b World Scientific, |c 2005. | ||
| 300 | |a 1 online resource (223 pages) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
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| 520 | |a Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experi. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Preface; Contents; Chapter 1 Introductory Chapter; Chapter 2 Avalanche Multiplication; Chapter 3 Static Avalanche Breakdown; Chapter 4 Avalanche Injection; Chapter 5 Dynamic Breakdown; Conclusion; List of Symbols; Bibliography; Index; Author Index. | |
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Breakdown (Electricity) | |
| 650 | 0 | |a High voltages. | |
| 650 | 0 | |a Semiconductors. | |
| 650 | 2 | |a Semiconductors | |
| 650 | 6 | |a Rupture diélectrique. | |
| 650 | 6 | |a Haute tension. | |
| 650 | 6 | |a Semi-conducteurs. | |
| 650 | 7 | |a semiconductor. |2 aat | |
| 650 | 7 | |a Breakdown (Electricity) |2 fast | |
| 650 | 7 | |a High voltages |2 fast | |
| 650 | 7 | |a Semiconductors |2 fast | |
| 700 | 1 | |a Kostamovaara, Juha. | |
| 700 | 1 | |a Vainshtein, Sergey. | |
| 776 | 1 | |z 9789812563958 | |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=296079 |z Texto completo |
| 938 | |a EBL - Ebook Library |b EBLB |n EBL296079 | ||
| 994 | |a 92 |b IZTAP | ||