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Dilute Nitride Semiconductors : Physics and Technology.
A review of the current status of research and development in IIINV semiconductor alloys.
| Clasificación: | Libro Electrónico |
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| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Burlington :
Elsevier,
2005.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Cover; Frontmatter; Half Title Page; Copyright; Title Page; Copyright; Preface; Contents; 1. MBE Growth and Characterization of Long Wavelength Dilute Nitride III-V Alloys; 1.1. INTRODUCTION; 1.2. MBE GROWTH OF DILUTE III-V NITRIDES; 1.3. DILUTE NITRIDE CHARACTERIZATION; 1.4. ENERGY BAND AND CARRIER TRANSPORT PROPERTIES; 1.5. ANNEALING AND N-In NEAREST NEIGHBOR EFFECTS; 1.6. SUMMARY; ACKNOWLEDGEMENTS; REFERENCES; 2. Epitaxial Growth of Dilute Nitrides by Metal-Organic Vapour Phase Epitaxy; 2.1. INTRODUCTION; 2.2. EPITAXIAL GROWTH OF GaInAsN-BASED STRUCTURES.
- 2.3. LONG WAVELENGTH GaAs-BASED LASER PERFORMANCES2.4. CONCLUSION; ACKNOWLEDGEMENTS; REFERENCES; 3. The Chemical Beam Epitaxy of Dilute Nitride Alloy Semiconductors; 3.1. INTRODUCTION TO DILUTE NITRIDE SEMICONDUCTORS; 3.2. THE CHEMICAL BEAM EPITAXIAL/METALORGANIC MOLECULAR BEAM EPITAXIAL (CBE/MOMBE) GROWTH PROCESS; 3.3. CBE OF DILUTE NITRIDE SEMICONDUCTORS; 3.4. FUNDAMENTAL STUDIES OF GaNxAs(1-x) BAND STRUCTURE; 3.5. THE COMPOSITIONS AND PROPERTIES OF DILUTE NITRIDES GROWN BY CBE; 3.6. CBE-GROWN DILUTE NITRIDE DEVICES; 3.7. THE POTENTIAL FOR PRODUCTION CBE OF DILUTE NITRIDES; 3.8. CONCLUSIONS.
- ACKNOWLEDGEMENTSREFERENCES; 4. MOMBE Growth and Characterization of III-V-N Compounds and Application to InAs Quantum Dots; ABSTRACT; 4.1. INTRODUCTION; 4.2. MOMBE GROWTH AND CHARACTERIZATION OF GaAsN; 4.3. RELATION OF In AND N INCORPORATIONS IN THE GROWTH OF GaInNAs; 4.4. GROWTH AND CHARACTERIZATION OF GaAsNSe NEW ALLOY; 4.5. APPLICATION OF GaAsN TO InAs QUANTUM DOTS; 4.6. SUMMARY; ACKNOWLEDGEMENTS; REFERENCES; 5. Recent Progress in Dilute Nitride Quantum Dots; 5.1. SELF-ORGANIZED QUANTUM DOTS; 5.2. DILUTE NITRIDE QUANTUM DOTS; 5.3. RECENT EXPERIMENTAL PROGRESS IN GaInNAs QDs.
- 5.4. OTHER KINDS OF DILUTE NITRIDE QDs5.5. SUMMARY AND FUTURE CHALLENGES IN DILUTE NITRIDE QDs; ACKNOWLEDGEMENTS; REFERENCES; 6. Physics of Isoelectronic Dopants in GaAs; 6.1. NITROGEN ISOELECTRONIC IMPURITIES; 6.2. THE FAILURE OF THE VIRTUAL CRYSTAL APPROXIMATION; 6.3. PREVALENT THEORETICAL MODELS ON DILUTE NITRIDES; 6.4. ELECTROREFLECTANCE STUDY OF GaAsN; 6.5. RESONANT RAMAN SCATTERING STUDY OF CONDUCTION BAND STATES; 6.6. COMPATIBILITY WITH OTHER EXPERIMENTAL RESULTS; 6.7. A COMPLEMENTARY ALLOY: GaAsBi; 6.8. SUMMARY; 6.9. CONCLUSION; REFERENCES.
- 7. Measurement of Carrier Localization Degree, Electron Effective Mass, and Exciton Size in InxGa1-xAs1-yNy AlloysABSTRACT; 7.1. INTRODUCTION; 7.2. EXPERIMENTAL; 7.3. SINGLE CARRIER LOCALIZATION IN InxGa1-xAs1-yNy; 7.4. MEASUREMENT OF THE ELECTRON EFFECTIVE MASS AND EXCITON WAVE FUNCTION SIZE; 7.5. CONCLUSIONS; ACKNOWLEDGEMENTS; REFERENCES; 8. Probing the "Unusual" Band Structure of Dilute Ga(AsN) Quantum Wells by Magneto-Tunnelling Spectroscopy and Other Techniques; 8.1. INTRODUCTION; 8.2. RESONANT TUNNELLING DIODES BASED ON DILUTE NITRIDES.