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Dilute Nitride Semiconductors : Physics and Technology.
A review of the current status of research and development in IIINV semiconductor alloys.
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Burlington :
Elsevier,
2005.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
| LEADER | 00000cam a2200000Mi 4500 | ||
|---|---|---|---|
| 001 | EBOOKCENTRAL_ocn475998008 | ||
| 003 | OCoLC | ||
| 005 | 20240329122006.0 | ||
| 006 | m o d | ||
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| 008 | 091207s2005 vtu o 000 0 eng d | ||
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| 019 | |a 936842057 | ||
| 020 | |a 9780080455990 |q (electronic bk.) | ||
| 020 | |a 0080455999 |q (electronic bk.) | ||
| 029 | 1 | |a DEBSZ |b 430350643 | |
| 029 | 1 | |a AU@ |b 000072105336 | |
| 035 | |a (OCoLC)475998008 |z (OCoLC)936842057 | ||
| 050 | 4 | |a TK7871.15.N57 |a TK7871.15.N57 H46 2005eb |a TK7871.15.N57H46 2005 | |
| 082 | 0 | 4 | |a 621.38152 |a 621.3'8152 |
| 049 | |a UAMI | ||
| 100 | 1 | |a Henini, Mohamed. | |
| 245 | 1 | 0 | |a Dilute Nitride Semiconductors : |b Physics and Technology. |
| 260 | |a Burlington : |b Elsevier, |c 2005. | ||
| 300 | |a 1 online resource (648 pages) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 520 | |a A review of the current status of research and development in IIINV semiconductor alloys. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Cover; Frontmatter; Half Title Page; Copyright; Title Page; Copyright; Preface; Contents; 1. MBE Growth and Characterization of Long Wavelength Dilute Nitride III-V Alloys; 1.1. INTRODUCTION; 1.2. MBE GROWTH OF DILUTE III-V NITRIDES; 1.3. DILUTE NITRIDE CHARACTERIZATION; 1.4. ENERGY BAND AND CARRIER TRANSPORT PROPERTIES; 1.5. ANNEALING AND N-In NEAREST NEIGHBOR EFFECTS; 1.6. SUMMARY; ACKNOWLEDGEMENTS; REFERENCES; 2. Epitaxial Growth of Dilute Nitrides by Metal-Organic Vapour Phase Epitaxy; 2.1. INTRODUCTION; 2.2. EPITAXIAL GROWTH OF GaInAsN-BASED STRUCTURES. | |
| 505 | 8 | |a 2.3. LONG WAVELENGTH GaAs-BASED LASER PERFORMANCES2.4. CONCLUSION; ACKNOWLEDGEMENTS; REFERENCES; 3. The Chemical Beam Epitaxy of Dilute Nitride Alloy Semiconductors; 3.1. INTRODUCTION TO DILUTE NITRIDE SEMICONDUCTORS; 3.2. THE CHEMICAL BEAM EPITAXIAL/METALORGANIC MOLECULAR BEAM EPITAXIAL (CBE/MOMBE) GROWTH PROCESS; 3.3. CBE OF DILUTE NITRIDE SEMICONDUCTORS; 3.4. FUNDAMENTAL STUDIES OF GaNxAs(1-x) BAND STRUCTURE; 3.5. THE COMPOSITIONS AND PROPERTIES OF DILUTE NITRIDES GROWN BY CBE; 3.6. CBE-GROWN DILUTE NITRIDE DEVICES; 3.7. THE POTENTIAL FOR PRODUCTION CBE OF DILUTE NITRIDES; 3.8. CONCLUSIONS. | |
| 505 | 8 | |a ACKNOWLEDGEMENTSREFERENCES; 4. MOMBE Growth and Characterization of III-V-N Compounds and Application to InAs Quantum Dots; ABSTRACT; 4.1. INTRODUCTION; 4.2. MOMBE GROWTH AND CHARACTERIZATION OF GaAsN; 4.3. RELATION OF In AND N INCORPORATIONS IN THE GROWTH OF GaInNAs; 4.4. GROWTH AND CHARACTERIZATION OF GaAsNSe NEW ALLOY; 4.5. APPLICATION OF GaAsN TO InAs QUANTUM DOTS; 4.6. SUMMARY; ACKNOWLEDGEMENTS; REFERENCES; 5. Recent Progress in Dilute Nitride Quantum Dots; 5.1. SELF-ORGANIZED QUANTUM DOTS; 5.2. DILUTE NITRIDE QUANTUM DOTS; 5.3. RECENT EXPERIMENTAL PROGRESS IN GaInNAs QDs. | |
| 505 | 8 | |a 5.4. OTHER KINDS OF DILUTE NITRIDE QDs5.5. SUMMARY AND FUTURE CHALLENGES IN DILUTE NITRIDE QDs; ACKNOWLEDGEMENTS; REFERENCES; 6. Physics of Isoelectronic Dopants in GaAs; 6.1. NITROGEN ISOELECTRONIC IMPURITIES; 6.2. THE FAILURE OF THE VIRTUAL CRYSTAL APPROXIMATION; 6.3. PREVALENT THEORETICAL MODELS ON DILUTE NITRIDES; 6.4. ELECTROREFLECTANCE STUDY OF GaAsN; 6.5. RESONANT RAMAN SCATTERING STUDY OF CONDUCTION BAND STATES; 6.6. COMPATIBILITY WITH OTHER EXPERIMENTAL RESULTS; 6.7. A COMPLEMENTARY ALLOY: GaAsBi; 6.8. SUMMARY; 6.9. CONCLUSION; REFERENCES. | |
| 505 | 8 | |a 7. Measurement of Carrier Localization Degree, Electron Effective Mass, and Exciton Size in InxGa1-xAs1-yNy AlloysABSTRACT; 7.1. INTRODUCTION; 7.2. EXPERIMENTAL; 7.3. SINGLE CARRIER LOCALIZATION IN InxGa1-xAs1-yNy; 7.4. MEASUREMENT OF THE ELECTRON EFFECTIVE MASS AND EXCITON WAVE FUNCTION SIZE; 7.5. CONCLUSIONS; ACKNOWLEDGEMENTS; REFERENCES; 8. Probing the "Unusual" Band Structure of Dilute Ga(AsN) Quantum Wells by Magneto-Tunnelling Spectroscopy and Other Techniques; 8.1. INTRODUCTION; 8.2. RESONANT TUNNELLING DIODES BASED ON DILUTE NITRIDES. | |
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Nitrides. | |
| 650 | 0 | |a Semiconductors. | |
| 650 | 4 | |a Semiconductors. | |
| 650 | 4 | |a Materials. | |
| 650 | 4 | |a Nitrides. | |
| 650 | 6 | |a Nitrures. | |
| 650 | 6 | |a Semi-conducteurs. | |
| 650 | 7 | |a semiconductor. |2 aat | |
| 650 | 7 | |a Nitrides |2 fast | |
| 650 | 7 | |a Semiconductors |2 fast | |
| 758 | |i has work: |a Dilute nitride semiconductors (Text) |1 https://id.oclc.org/worldcat/entity/E39PCGvQ4gPt4HqW9PHr7t8vh3 |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 1 | |z 9780080445021 | |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=269577 |z Texto completo |
| 938 | |a ProQuest Ebook Central |b EBLB |n EBL269577 | ||
| 994 | |a 92 |b IZTAP | ||