Quantum dots : research, technology and applications /

Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Knoss, Randolf W.
Formato: Electrónico eBook
Idioma:Inglés
Publicado: New York : Nova Science Publishers, ©2009.
Temas:
Quantum dots.
Semiconductors.
Quantum Dots
Semiconductors
Points quantiques.
Semi-conducteurs.
semiconductor.
TECHNOLOGY & ENGINEERING > Electronics > Solid State.
TECHNOLOGY & ENGINEERING > Electronics > Semiconductors.
Quantum dots
Acceso en línea:Texto completo
Tabla de Contenidos:
  • QUANTUM DOTS: RESEARCH, TECHNOLOGY AND APPLICATIONS
  • NOTICE TO THE READER
  • CONTENTS
  • PREFACE
  • FEW-ELECTRON SEMICONDUCTOR QUANTUMDOTS IN MAGNETIC FIELD:THEORY AND METHODS
  • Abstract
  • 1. Introduction
  • 2. 2D Semiconductor Quantum Dots
  • 3. Parabolic Confinement Potential
  • 4. Other Confinement Potentials
  • 5. Theory
  • 6. General Methods
  • 7. Quantum Monte Carlo methods
  • 7.1. Variational Monte Carlo Method
  • 7.2. Diffusion Monte Carlo Method
  • 8. The Simplest 2D Semiconductor Quantum Dot (N=2)
  • 8.1. Exact Numerical Diagonalization
  • 8.2. Variational Theory9. Quantum Hall Limit
  • 10. Generalized Description of Few-Electron SemiconductorQuantum Dots in an Arbitrary Perpendicular MagneticField
  • 11. Conclusion
  • References
  • INVESTIGATIONS OF ELECTRONIC STATESIN SELF-ASSEMBLED INAS/GAASQUANTUM-DOT STRUCTURES
  • Abstract
  • 1. Introduction
  • 2. Space-Charge Techniques
  • 2.1. Capacitance-Voltage Spectroscopy
  • 2.2. Deep-Level Transient Spectroscopy
  • 2.3. Laplace-Transform Deep-Level Transient Spectroscopy
  • 3. Coexistence of Deep Levels with Optically Active QuantumDots
  • 3.1. Characterization of Electronic Structure by CV Spectroscopy3.2. DLTS Characterization of Electronic Structure in Quantum-DotStructures
  • 3.3. Fine Structures of the Deep Levels Probed with LDLTS
  • 4. Effects of Rapid Thermal Annealing on QD Structures
  • 4.1. Postgrowth Rapid Thermal Annealing
  • 4.2. Effects of Annealing on PL Spectra
  • 4.3. Effects of Annealing on DLTS Spectra
  • 5. Electron Emissions from QD Intrinsic States
  • 5.1. Preliminary Investigation of Carrier Emission from the Electronic Statesof Self-assembled InAs QDs by LDLTS
  • 5.2. Electron Emission from QD Intrinsic States6. Conclusion
  • References
  • CHEMICALLY DEPOSITED THIN FILMS OF CLOSEPACKED CADMIUM SELENIDE QUANTUM DOTS:PHOTOPHYSICS, OPTICAL AND ELECTRICALPROPERTIES
  • Abstract
  • 1. Introduction
  • 2. The Chemical Synthetic Route to Nanostructured CdSe in ThinFilm Form
  • 3. Structural Characterization of Close Packed CdSe QDs in ThinFilm Form
  • 3.1. Identification and Estimation of the Average Crystal Size of the Nanostructured CdSe Thin Films
  • 4. Electronic Transitions and Optical Properties of theSynthesized Thin Films Composed by 3D Arrays of CdSeQuantum Dots4.1. Band Structure Considerations for Macrocrystalline Cubic CdSe
  • 4.2. The Influence of Size Quantization. A Simple Picture
  • 4.3. Experimental Electronic Spectra of Nanostructured CdSe Thin Films. The Fundamental “Band-to-Bandâ€? Electronic Transitions
  • 4.4. Size Evolution of the Fundamental “Interbandâ€? Electronic Transitions:Analysis of the Three-Dimensional Charge Carrier ConfinementEffects (Quantum Size Effects)

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