III-nitride : semiconductor materials /

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III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Feng, Zhe Chuan
Formato: Electrónico eBook
Idioma:Inglés
Publicado: London : Singapore ; Hackensack, NJ : Imperial College Press ; Distributed by World Scientific, ©2006.
Temas:
Semiconductors > Materials.
Nitrides.
Semiconductors.
Nitrides > Electric properties.
Electronics > Materials.
Metal organic chemical vapor deposition.
Semiconductors
Semi-conducteurs.
Nitrures > Propriétés électriques.
Électronique > Matériaux.
Dépôt en phase vapeur par organométalliques.
Semi-conducteurs > Matériaux.
Nitrures.
semiconductor.
SCIENCE > Chemistry > Physical & Theoretical.
Metal organic chemical vapor deposition
Electronics > Materials
Nitrides
Semiconductors > Materials
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Cover
  • Contents
  • Preface
  • Chapter 1 Hydride vapor phase epitaxy of group III nitride materials
  • 1. Introduction
  • 2. Experiment
  • 3. Material Properties
  • 3.1. Undoped GaN layers
  • 3.2. Si-doped GaN layers
  • 3.3. Mg-doped GaN layers
  • 3.4. Zn-doped GaN layers
  • 3.5. AlN layers
  • 3.6. AlGaN layers
  • 3.7. InN and InGaN layers
  • 4. New directions in HVPE development
  • 4.1. Large area and multi wafer HVPE growth
  • 4.2. Multi-layer structures
  • 4.3. P-n junctions
  • 4.4. Structures with two dimensional carrier gas
  • 4.5. Nano structures and porous materials
  • 5. Applications of HVPE grown group III nitride materials
  • 5.1. Substrate applications
  • 5.2. Device Applications
  • 6. Conclusions
  • Chapter 2 Planar MOVPE technology for epitaxy of III-nitride materials
  • 1. History of Reactor Development for III-Nitrides.

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