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Silicon carbide power devices /
Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesiv...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Autor Corporativo: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Singapore ; Hackensack, N.J. :
World Scientific,
©2005.
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| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 100 | 1 | |a Baliga, B. Jayant, |d 1948- |1 https://id.oclc.org/worldcat/entity/E39PBJcgCbvyFPXJ4c8pJvdfbd | |
| 245 | 1 | 0 | |a Silicon carbide power devices / |c B. Jayant Baliga. |
| 260 | |a Singapore ; |a Hackensack, N.J. : |b World Scientific, |c ©2005. | ||
| 300 | |a 1 online resource (xxi, 503 pages) : |b illustrations (some color) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 504 | |a Includes bibliographical references and index. | ||
| 505 | 0 | |a Preface; Contents; Chapter 1 Introduction; 1.1 Ideal and Typical Power Device Characteristics; 1.2 Unipolar Power Devices; 1.3 Bipolar Power Devices; 1.4 MOS-Bipolar Power Devices; 1.5 Ideal Drift Region for Unipolar Power Devices; 1.6 Summary; References; Chapter 2 Material Properties and Technology; 2.1 Fundamental Properties; 2.1.1 Energy Band Gap; 2.1.2 Impact Ionization Coefficients; 2.1.3 Electron Mobility; 2.2 Other Properties Relevant to Power Devices; 2.2.1 Donor and Acceptor Ionization Energy Levels; 2.2.2 Recombination Lifetimes; 2.2.3 Metal-Semiconductor Contacts. | |
| 505 | 8 | |a 2.3 Fabrication Technology2.3.1 Diffusion Coefficients and Solubility of Dopants; 2.3.2 Ion Implantation and Annealing; 2.3.3 Gate Oxide Formation; 2.3.4 Reactive Ion Etching of Trenches; 2.4 Summary; References; Chapter 3 Breakdown Voltage; 3.1 One-Dimensional Abrupt Junction; 3.2 Schottky Diode Edge Termination; 3.2.1 Planar Schottky Diode Edge Termination; 3.2.2 Planar Schottky Diode with Field Plate Edge Temination; 3.2.3 Schottky Diode with Floating Metal Rings; 3.2.4 Schottky Diode Edge Termination with Argon Implant; 3.2.5 Schottky Diode Edge Termination with RESP Region. | |
| 505 | 8 | |a 3.3 P-N Junction Edge Termination3.3.1 Planar Junction Edge Termination; 3.3.2 Planar Junction Edge Termination with Field Plate; 3.3.3 Planar Junction Edge Termination with Floating Rings; 3.3.4 Planar Junction Edge Termination with P-Extension; 3.4 Summary; References; Chapter 4 PiN Rectifiers; 4.1 One-Dimensional PiN Structure; 4.2 Experimental Results; 4.3 Summary; References; Chapter 5 Schottky Rectifiers; 5.1 Schottky Rectifier Structure: Forward Conduction; 5.1.1 Forward Conduction: Simulation Results; 5.1.2 Forward Conduction: Experimental Results. | |
| 505 | 8 | |a 5.2 Schottky Rectifier Structure: Reverse Blocking5.3 Schottky Rectifier Structure: Impact of Defects; 5.4 Reliability Issues; 5.5 Summary; References; Chapter 6 Shielded Schottky Rectifiers; 6.1 Junction Barrier Schottky (JBS) Rectifier Structure; 6.1.1 JBS Rectifier Structure: Forward Conduction Model; 6.1.2 JBS Rectifier Structure: Reverse Leakage Model; 6.1.3 JBS Rectifier Structure: Simulation Results; 6.1.4 JBS Rectifier Structure: Experimental Results; 6.2 Trench MOS Barrier Schottky (TMBS) Rectifier Structure; 6.2.1 TMBS Rectifier Structure: Simulation Results. | |
| 505 | 8 | |a 6.3 Trench Schottky Barrier Schottky (TSBS) Rectifier Structure6.3.1 TSBS Rectifier Structure: Simulation Results; 6.3.2 TSBS Rectifiers: Experimental Results; 6.4 Summary; References; Chapter 7 Metal-Semiconductor Field Effect Transistors; 7.1 Trench Junction (Metal-Semiconductor) FET Structure; 7.1.1 Forward Blocking; 7.1.2 On-State; 7.2 Trench MESFET Structure: Simulation Results; 7.2.1 On-State Characteristics; 7.2.2 Blocking Characteristics; 7.2.3 Output Characteristics; 7.3 JFET Structure: Simulation Results; 7.4 Planar MESFET Structure; 7.4.1 Forward Blocking; 7.4.2 On-State Resistance. | |
| 520 | |a Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Mater. | ||
| 588 | 0 | |a Print version record. | |
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Silicon carbide |x Electric properties. | |
| 650 | 0 | |a Semiconductors. | |
| 650 | 2 | |a Semiconductors | |
| 650 | 6 | |a Semi-conducteurs. | |
| 650 | 7 | |a semiconductor. |2 aat | |
| 650 | 7 | |a Semiconductors |2 fast | |
| 650 | 7 | |a Silicon carbide |x Electric properties |2 fast | |
| 710 | 2 | |a World Scientific (Firm) | |
| 758 | |i has work: |a Silicon carbide power devices (Text) |1 https://id.oclc.org/worldcat/entity/E39PCFBymtBX8QGK9wgddMXgYX |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 0 | 8 | |i Print version: |a Baliga, B. Jayant. |t Silicon Carbide Power Devices. |d Singapore : World Scientific Publishing Company, ©2006 |z 9789812566058 |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=1681716 |z Texto completo |
| 938 | |a EBL - Ebook Library |b EBLB |n EBL1681716 | ||
| 994 | |a 92 |b IZTAP | ||