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Physics, chemistry and application of nanostructures : review and short notes to Nanomeeting-2001 : Minsk, Belarus 22-25 May 2001 /
The book contains impressive results obtained in the XX-th century and discussion of next challenges of the XXI-st century in understanding of the nanoworld. The main sections of the book are: (1) Physics of Nanostructures, (2) Chemistry of Nanostructures, (3) Nanotechnology, (4) nanostructure Based...
| Clasificación: | Libro Electrónico |
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| Autor Corporativo: | |
| Otros Autores: | , , |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Singapore ; River Edge, NJ :
World Scientific,
©2001.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Foreword; CONTENTS; PHYSICS OF NANOSTRUCTURES; Discovery and understanding of nanoworld in the XX-th century: main achievements in the mirror of the Nobel Prizes; Self-assembled InGaAs quantum dot superlattices; Multiexciton dynamics of GaAs single quantum dots; Photoreflectance Investigations of low dimensional semiconductor structures; Thermoelectric properties of chaotic quantum dots; Polarons in quantum wells; Self-assembling SiGe dots: nucleation and growth; Stress and strain distributions in Ge dots on Si(001) by molecular dynamics simulation.
- Light emission from semiconducting silicide nanostructures in siliconPhysics of multiwalled carbon nanotubes; Ultra thin C60-based films: molecular arrangement and electronic states; On a possibility of the Mott transition in a quantum dot ensemble; Screening of extra point charge in a few particle coulomb system; A superlattice with resonant states in a unit cell: the band structure and electron transitions; Dispersion of guided plasmon-polaritons in a planar Bragg microresonator with two-dimensional electron system; Optical properties of fractal Cantor-like multilayer nanostructures.
- I-V curves of short intentionally disordered superlattices in vertical directionPhonon-plasmon interaction in tunneling GaAs/AlAs superlattices: experiment and calculations; Negative and persistent positive photoconductivity in p-type Al0.5Ga0.5As / GaAs / Al0.5Ga0.5As; Raman and photoluminescence studies of the interface reconstructions in GaAs/AlAs superlattices grown on (311) and (001) surfaces; Investigation of surface morphology features and local photoelectric properties of InAs/GaAs quantum dot structures; Controllable one-dimensional photonic structures with n-i-p-i crystal layers.
- Influence of electron irradiation on carrier recombination and intradot relaxation in InGaAs/GaAs quantum dot structuresElectric field effect on absorption spectra of an ensemble of close-packed CdSe nanocrystals; Ge nanocrystals in SiC: ab initio supercell calculations of optical properties; Surface energies of Ge and Si and consequences for nanocrystallites; 2D nanostructures and 3D silicide nanocrystallites at rare-earth metal/Si(111) interfaces: formation mechanism and properties; Photoluminescence of the silicon carbide nanoclusters embeded into porous silicon.
- Exciton recombination mechanism in light emitting nanocrystalline siliconTime-resolved photoluminescence of nanocrystalline silicon films obtained by laser ablation; Electron-phonon coupling in heavily doped silicon; Influence of surface phases on electrical conductivity of silicon surface; Morphology and optical properties of Si(111)/CrSi2/Si and Si(111)/Mg2Si/Si systems with self-organized quantum dots; Microcavity enhancement of second-harmonic generation and Raman scattering in photonic crystals of porous silicon.