Nano-CMOS circuit and physical design /
Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength...
Clasificación: | Libro Electrónico |
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Otros Autores: | |
Formato: | Electrónico eBook |
Idioma: | Inglés |
Publicado: |
Hoboken, N.J. :
John Wiley,
©2005.
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Temas: | |
Acceso en línea: | Texto completo |
Tabla de Contenidos:
- COVER
- TABLE OF CONTENTS
- FOREWORD
- PREFACE
- CHAPTER 1 NANO-CMOS SCALING PROBLEMS AND IMPLICATIONS
- 1.1 Design Methodology in the Nano-CMOS Era
- 1.2 Innovations Needed to Continue Performance Scaling
- 1.3 Overview of Sub-100-nm Scaling Challenges and Subwavelength Optical Lithography
- 1.3.1 Back-End-of-Line Challenges (Metallization)
- 1.3.2 Front-End-of-Line Challenges (Transistors)
- 1.4 Process Control and Reliability
- 1.5 Lithographic Issues and Mask Data Explosion
- 1.6 New Breed of Circuit and Physical Design Engineers
- 1.7 Modeling Challenges
- 1.8 Need for Design Methodology Changes
- 1.9 Summary
- References
- PART I PROCESS TECHNOLOGY AND SUBWAVELENGTH OPTICAL LITHOGRAPHY: PHYSICS, THEORY OF OPERATION, ISSUES, AND SOLUTIONS
- CHAPTER 2 CMOS DEVICE AND PROCESS TECHNOLOGY
- 2.1 Equipment Requirements for Front-End Processing
- 2.2 Front-End-Device Problems in CMOS Scaling
- 2.3 Back-End-of-Line Technology
- References
- CHAPTER 3 THEORY AND PRACTICALITIES OF SUBWAVELENGTH OPTICAL LITHOGRAPHY
- 3.1 Introduction and Simple Imaging Theory
- 3.2 Challenges for the 100-nm Node
- 3.3 Resolution Enhancement Techniques: Physics
- 3.4 Physical Design Style Impact on RET and OPC Complexity
- 3.5 The Road Ahead: Future Lithographic Technologies
- References
- PART II PROCESS SCALING IMPACT ON DESIGN
- CHAPTER 4 MIXED-SIGNAL CIRCUIT DESIGN
- 4.1 Introduction
- 4.2 Design Considerations
- 4.3 Device Modeling
- 4.4 Passive Components
- 4.5 Design Methodology
- 4.6 Low-Voltage Techniques
- 4.7 Design Procedures
- 4.8 Electrostatic Discharge Protection
- 4.9 Noise Isolation
- 4.10 Decoupling
- 4.11 Power Busing
- 4.12 Integration Problems
- 4.13 Summary
- References
- CHAPTER 5 ELECTROSTATIC DISCHARGE PROTECTION DESIGN
- 5.1 Introduction
- 5.2 ESD Standards and Models
- 5.3 ESD Protection Design
- 5.4 Low-C ESD Protection Design for High-Speed I/O
- 5.5 ESD Protection Design for Mixed-Voltage I/O
- 5.6 SCR Devices for ESD Protection
- 5.7 Summary
- References
- CHAPTER 6 INPUT/OUTPUT DESIGN
- 6.1 Introduction
- 6.2 I/O Standards
- 6.3 Signal Transfer
- 6.4 ESD Protection
- 6.5 I/O Switching Noise
- 6.6 Termination
- 6.7 Impedance Matching
- 6.8 Preemphasis
- 6.9 Equalization
- 6.10 Conclusion
- References
- CHAPTER 7 DRAM
- 7.1 Introduction
- 7.2 DRAM Basics
- 7.3 Scaling the Capacitor
- 7.4 Scaling the Array Transistor
- 7.5 Scaling the Sense Amplifier
- 7.6 Summary
- References
- CHAPTER 8 SIGNAL INTEGRITY PROBLEMS IN ON-CHIP INTERCONNECTS
- 8.1 Introduction
- 8.2 Interconnect Parasitics Extraction
- 8.3 Signal Integrity Analysis
- 8.4 Design Solutions for Signal Integrity
- 8.5 Summary
- References
- CHAPTER 9 ULTRALOW POWER CIRCUIT DESIGN
- 9.1 Introduction
- 9.2 Design-Time Low-Power Techniques
- 9.3 Run-Time Low-Power Techniques
- 9.4 Technology Innovations for Low-Power Design
- 9.5 Perspectives for Future Ultralow-Power Design
- References
- PART III IMPA.