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Frontiers in Electronics : Proceedings of the WOFE-04, Wyndham Aruba Beach Resort, 17-23 December 2004 /
Frontiers in Electronics reports on the most recent developments and future trends in the electronics and photonics industry. The issues address CMOS, SOI and wide band gap semiconductor technology, terahertz technology, and bioelectronics, providing a unique interdisciplinary overview of the key em...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Hackensack, NJ :
World Scientific,
©2006.
|
| Colección: | Selected topics in electronics and systems ;
v. 41. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 111 | 2 | |a Workshop on Frontiers in Electronics. | |
| 245 | 1 | 0 | |a Frontiers in Electronics : |b Proceedings of the WOFE-04, Wyndham Aruba Beach Resort, 17-23 December 2004 / |c edited by H. Iwai [and others]. |
| 260 | |a Hackensack, NJ : |b World Scientific, |c ©2006. | ||
| 300 | |a 1 online resource (xxiii, 749 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 347 | |a data file | ||
| 490 | 1 | |a Selected topics in electronics and systems ; |v v. 41 | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Preface; Photographs at WOFE 2004; CONTENTS; I. Frontiers in Electronics: Technology Trends and Future Concepts; Are we at the End of CMOS Scaling?; 3D Size Effects in Advanced SOI Devices; Frontiers of Nano-Bio System; Challenges For Future Semiconductor Manufacturing; Nanoelectronics -- Opportunities and Challenges; Asymmetric Tunneling Source MOSFETS: A Novel Device Solution for Sub-100nm CMOS Technology; II. CMOS Technology: Nanoscale Physics New Materials and Structures; Analysis of the Effects of Strain in Ultra-Thin SOI MOS Devices. | |
| 505 | 8 | |a Device Simulation Demands of Upcoming Microelectronics DevicesSON (Silicon On Nothing) Platform for ULSI Era: Technology & Devices; Highly Scaled CMOS Device Technologies with New Structures and New Materials; Performance Limitations of Si CMOS and Alternatives for Nanoelectronics; CMOS Devices Architectures and Technology Innovations for the Nanoelectronics Era; Novel Dielectric Materials for Future Transistor Generations; Part I: Bond Strain and Defects at Si-SiO2 and Dielectric Interfaces in High-k Gate Stacks. | |
| 505 | 8 | |a Part II: Conduction Band-Edge States Associated with Removal of d-State Degeneracies by the Static Jahn-Teller EffectAdvanced Cooling Technologies For Microprocessors; A New Approach to Characterize and Predict Lifetime of Deep-Submicron NMOS Devices; Undoped Body Symmetric Double Gate MOSFET Modeling; III. CMOS Technology: Device and Process Characterization; Study of the Gate Insulator/Silicon Interface Utilizing Soft and Hard X-Ray Photoelectron Spectroscopy at SPring-8; Deformable Electronic Surfaces; Current Issues and Future Prospects of Lithography. | |
| 505 | 8 | |a A Theoretical Study of Point Defects in Zirconia-Silicon InterfacesElastomeric Interconnects; IV. Nanowire/Nanotube and Quantum Device; On the Possibility of an Intersubband Laser in Silicon-on-Insulator; Toward Ultra-Low Power III-V Quantum Large Scale Integrated Circuits for Ubiquitous Network Era; Ballistic Electron Acceleration Negative-Differential-Conductivity Devices; Current Instability and Plasma Wave Generation in Ungated Two Dimensional Electron Layers; V. Spintronics and Emerging High-Speed Devices; High-Power Switching Using III-Nitride Metal-Oxide-Semiconductor Heterostructures. | |
| 505 | 8 | |a Recent Progress on GaN-Based Electron DevicesAdvancements in Nanoelectronic SONOS Nonvolatile Semiconductor Memory (NVSM) Devices and Technology; A Quantum Dot Microcavity Terahertz Laser; The Growth and Characterization of Room Temperature Ferromagnetic Wideband-Gap Materials For Spintronic Applications; Enhancing Power Electronic Devices with Wide Bandgap Semiconductors; VI. Optoelectronics; Feasibility of an Optical Frequency Modulation System for Free-Space Optical Communications. | |
| 520 | |a Frontiers in Electronics reports on the most recent developments and future trends in the electronics and photonics industry. The issues address CMOS, SOI and wide band gap semiconductor technology, terahertz technology, and bioelectronics, providing a unique interdisciplinary overview of the key emerging issues. This volume accurately reflects the recent research and development trends: from pure research to research and development; and its contributors are leading experts in microelectronics, nanoelectronics, and nanophotonics from academia, industry, and government agencies. Sample Chapter. | ||
| 506 | |3 Use copy |f Restrictions unspecified |2 star |5 MiAaHDL | ||
| 533 | |a Electronic reproduction. |b [Place of publication not identified]: |c HathiTrust Digital Library. |d 2022. |5 MiAaHDL | ||
| 538 | |a Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. |u http://purl.oclc.org/DLF/benchrepro0212 |5 MiAaHDL | ||
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| 653 | 1 | |a WOFE | |
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| 700 | 1 | |a Iwai, H. | |
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| 830 | 0 | |a Selected topics in electronics and systems ; |v v. 41. | |
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