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Switchmode RF power amplifiers /

A majority of people now have a digital mobile device whether it be a cell phone, laptop, or blackberry. Now that we have the mobility we want it to be more versatile and dependable; RF power amplifiers accomplish just that. These amplifiers take a small input and make it stronger and larger creatin...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Grebennikov, Andrei, 1956-
Otros Autores: Sokal, Nathan O.
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Amsterdam ; Boston : Elsevier/Newnes, ©2007.
Colección:Communications engineering series.
Temas:
Acceso en línea:Texto completo
Texto completo

MARC

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100 1 |a Grebennikov, Andrei,  |d 1956-  |1 https://id.oclc.org/worldcat/entity/E39PCjJ766M79C4QkKGtQ3fCV3 
245 1 0 |a Switchmode RF power amplifiers /  |c Andrei Grebennikov, Nathan O. Sokal. 
260 |a Amsterdam ;  |a Boston :  |b Elsevier/Newnes,  |c ©2007. 
300 |a 1 online resource (xviii, 424 pages) :  |b illustrations 
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490 1 |a Communications engineering series 
520 |a A majority of people now have a digital mobile device whether it be a cell phone, laptop, or blackberry. Now that we have the mobility we want it to be more versatile and dependable; RF power amplifiers accomplish just that. These amplifiers take a small input and make it stronger and larger creating a wider area of use with a more robust signal. Switching mode RF amplifiers have been theoretically possible for decades, but were largely impractical because they distort analog signals until they are unrecognizable. However, distortion is not an issue with digital signalslike those used by WLANs and digital cell phonesand switching mode RF amplifiers have become a hot area of RF/wireless design. This book explores both the theory behind switching mode RF amplifiers and design techniques for them. *Provides essential design and implementation techniques for use in cma2000, WiMAX, and other digital mobile standards *Both authors have written several articles on the topic and are well known in the industry *Includes specific design equations to greatly simplify the design of switchmode amplifiers. 
504 |a Includes bibliographical references and index. 
588 0 |a Print version record. 
505 0 |a Cover -- Table of Contents -- About Andrei Grebennikov -- About Nathan O. Sokal -- Preface -- Acknowledgments -- Chapter 1: Power-Amplifier Design Principles -- 1.1 Spectral-Domain Analysis -- 1.2 Basic Classes of Operation: A, AB, B, and C -- 1.3 Active Device Models -- 1.4 High-Frequency Conduction Angle -- 1.5 Nonlinear Effect of Collector Capacitance -- 1.6 Push-Pull Power Amplifiers -- 1.7 Power Gain and Stability -- 1.8 Parametric Oscillations -- References -- Chapter 2: Class-D Power Amplifiers -- 2.1 Switched-Mode Power Amplifiers with Resistive Load -- 2.2 Complementary Voltage-Switching Configuration -- 2.3 Transformer-Coupled Voltage-Switching Configuration -- 2.4 Symmetrical Current-Switching Configuration -- 2.5 Transformer-Coupled Current-Switching Configuration -- 2.6 Voltage-Switching Configuration with Reactive Load -- 2.7 Drive and Transition Time -- 2.8 Practical Class-D Power Amplifier Implementation -- References -- Chapter 3: Class-F Power Amplifiers -- 3.1 Biharmonic Operation Mode -- 3.2 Idealized Class-F Mode -- 3.3 Class F with Maximally Flat Waveforms -- 3.4 Class F with Quarter-wave Transmission Line -- 3.5 Effect of Saturation Resistance and Shunt Capacitance -- 3.6 Load Networks with Lumped Elements -- 3.7 Load Networks with Transmission Lines -- 3.8 LDMOSFET Power-Amplifier Design Examples -- 3.9 Practical RF and Microwave Class-F Power Amplifiers -- References -- Chapter 4: Inverse Class F -- 4.1 Biharmonic Operation Mode -- 4.2 Idealized Inverse Class-F Mode -- 4.3 Inverse Class F with Quarter-wave Transmission Line -- 4.4 Load Networks with Lumped Elements -- 4.5 Load Networks with Transmission Lines -- 4.6 LDMOSFET Power-Amplifier Design Examples -- 4.7 Practical Implementation -- References -- Chapter 5: Class E with Shunt Capacitance -- 5.1 Effect of Detuned Resonant Circuit -- 5.2 Load Network with Shunt Capacitor and Series Filter -- 5.3 Matching with Standard Load -- 5.4 Effect of Saturation Resistance -- 5.5 Driving Signal and Finite Switching Time -- 5.6 Effect of Nonlinear Shunt Capacitance -- 5.7 Push-Pull Operation Mode -- 5.8 Load Network with Transmission Lines -- 5.9 Practical RF and Microwave Class-E Power Amplifiers and Applications -- References -- Chapter 6: Class E with Finite dc-Feed Inductance -- 6.1 Class E with One Capacitor and One Inductor -- 6.2 Generalized Class-E Load Network with Finite dc-Feed Inductance -- 6.3 Subharmonic Class E -- 6.4 Parallel-Circuit Class E -- 6.5 Even-Harmonic Class E -- 6.6 Effect of Bondwire Inductance -- 6.7 Load Network with Transmission Lines -- 6.8 Broadband Class E -- 6.9 Power Gain -- 6.10 CMOS Class-E Power Amplifiers -- References -- Chapter 7: Class E with Quarter-wave Transmission Line -- 7.1 Load Network with Parallel Quarter-wave Line -- 7.2 Optimum Load Network Parameters -- 7.3 Load Network with Zero Series Reactance -- 7.4 Matching Circuit with Lumped Elements -- 7.5 Matching Circui. 
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650 0 |a Power amplifiers. 
650 0 |a Microwave amplifiers. 
650 6 |a Amplificateurs de puissance. 
650 6 |a Amplificateurs micro-ondes. 
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650 7 |a TECHNOLOGY & ENGINEERING  |x Electronics  |x Circuits  |x Integrated.  |2 bisacsh 
650 7 |a Microwave amplifiers  |2 fast 
650 7 |a Power amplifiers  |2 fast 
700 1 |a Sokal, Nathan O. 
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