Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 ye...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autores principales: Franco, Jacopo (Autor), Kaczer, Ben (Autor), Groeseneken, Guido (Autor)
Autor Corporativo: SpringerLink (Online service)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Dordrecht : Springer Netherlands : Imprint: Springer, 2014.
Edición:1st ed. 2014.
Colección:Springer Series in Advanced Microelectronics, 47
Temas:
Semiconductors.
Electronic circuits.
Optical materials.
Electronic Circuits and Systems.
Optical Materials.
Acceso en línea:Texto Completo
Tabla de Contenidos:
  • 1 Introduction
  • 2 Degradation mechanisms
  • 3 Techniques and devices
  • 4 Negative Bias Temperature Instability in (Si)Ge pMOSFETs
  • 5 Negative Bias Temperature Instability in nanoscale devices
  • 6 Channel Hot Carriers and other reliability mechanisms
  • 7 Conclusions and perspectives.

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