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Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications
Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 ye...
| Clasificación: | Libro Electrónico |
|---|---|
| Autores principales: | , , |
| Autor Corporativo: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Dordrecht :
Springer Netherlands : Imprint: Springer,
2014.
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| Edición: | 1st ed. 2014. |
| Colección: | Springer Series in Advanced Microelectronics,
47 |
| Temas: | |
| Acceso en línea: | Texto Completo |