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Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies
Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of convention...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Autor Corporativo: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Dordrecht :
Springer Netherlands : Imprint: Springer,
2010.
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| Edición: | 1st ed. 2010. |
| Colección: | Springer Series in Advanced Microelectronics,
28 |
| Temas: | |
| Acceso en línea: | Texto Completo |
MARC
| LEADER | 00000nam a22000005i 4500 | ||
|---|---|---|---|
| 001 | 978-90-481-3280-5 | ||
| 003 | DE-He213 | ||
| 005 | 20220116011746.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 100301s2010 ne | s |||| 0|eng d | ||
| 020 | |a 9789048132805 |9 978-90-481-3280-5 | ||
| 024 | 7 | |a 10.1007/978-90-481-3280-5 |2 doi | |
| 050 | 4 | |a TK7867-7867.5 | |
| 072 | 7 | |a TJFC |2 bicssc | |
| 072 | 7 | |a TEC008010 |2 bisacsh | |
| 072 | 7 | |a TJFC |2 thema | |
| 082 | 0 | 4 | |a 621.3815 |2 23 |
| 100 | 1 | |a Fulde, Michael. |e author. |4 aut |4 http://id.loc.gov/vocabulary/relators/aut | |
| 245 | 1 | 0 | |a Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies |h [electronic resource] / |c by Michael Fulde. |
| 250 | |a 1st ed. 2010. | ||
| 264 | 1 | |a Dordrecht : |b Springer Netherlands : |b Imprint: Springer, |c 2010. | |
| 300 | |a X, 127 p. |b online resource. | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 347 | |a text file |b PDF |2 rda | ||
| 490 | 1 | |a Springer Series in Advanced Microelectronics, |x 2197-6643 ; |v 28 | |
| 505 | 0 | |a Analog Properties of Multi-Gate MOSFETs -- High-k Related Design Issues -- Multi-Gate Related Design Aspects -- Multi-Gate Tunneling FETs -- Conclusions and Outlook. | |
| 520 | |a Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies. Closing the gap from technology to design a detailed insight into circuit performance trade-offs related to multi-gate and high-k device specifics is provided. The new effect of transient threshold voltage variations is described with an equivalent model that allows a systematic assessment of the consequences on circuit level and the development of countermeasures to compensate for performance degradation in comparators and A/D converters. Key analog, mixed-signal and RF building blocks are realized in high-k multi-gate technology and benchmarked against planar bulk. Performance and area benefits, enabled by advantageous multi-gate device properties are analytically and experimentally quantified for reference circuits, operational amplifiers and D/A converters. This is based on first time silicon investigations of complex mixed-signal building blocks as D/A converter and PLL with multi-gate devices. As another first, the integration of tunnel transistors in a multi-gate process is described, enabling devices with promising scaling and analog properties. Based on these devices a novel reference circuit is proposed which features low power consumption. | ||
| 650 | 0 | |a Electronic circuits. | |
| 650 | 0 | |a Optical materials. | |
| 650 | 1 | 4 | |a Electronic Circuits and Systems. |
| 650 | 2 | 4 | |a Optical Materials. |
| 710 | 2 | |a SpringerLink (Online service) | |
| 773 | 0 | |t Springer Nature eBook | |
| 776 | 0 | 8 | |i Printed edition: |z 9789048132867 |
| 776 | 0 | 8 | |i Printed edition: |z 9789048132799 |
| 776 | 0 | 8 | |i Printed edition: |z 9789400730830 |
| 830 | 0 | |a Springer Series in Advanced Microelectronics, |x 2197-6643 ; |v 28 | |
| 856 | 4 | 0 | |u https://doi.uam.elogim.com/10.1007/978-90-481-3280-5 |z Texto Completo |
| 912 | |a ZDB-2-ENG | ||
| 912 | |a ZDB-2-SXE | ||
| 950 | |a Engineering (SpringerNature-11647) | ||
| 950 | |a Engineering (R0) (SpringerNature-43712) | ||