Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications

This book provides a snapshot of recent progress in the field of rare-earth-doped group III-nitride semiconductors, especially GaN, but extending to AlN and the alloys AlGaN, AlInN and InGaN. This material class is currently enjoying an upsurge in interest due to its ideal suitability for both optoe...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: SpringerLink (Online service)
Otros Autores: O'Donnell, Kevin Peter (Editor ), Dierolf, Volkmar (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Dordrecht : Springer Netherlands : Imprint: Springer, 2010.
Edición:1st ed. 2010.
Colección:Topics in Applied Physics, 124
Temas:
Lasers.
Optical materials.
Quantum optics.
Laser.
Optical Materials.
Quantum Optics.
Acceso en línea:Texto Completo
Tabla de Contenidos:
  • Theoretical Modelling of Rare Earth Dopants in GaN
  • RE Implantation and Annealing of III-Nitrides
  • Lattice Location of RE Impurities in IIINitrides
  • Electroluminescent Devices Using RE-Doped III-Nitrides
  • Er-Doped GaN and InxGa1-xN for Optical Communications
  • Rare-Earth-Doped GaN Quantum Dot
  • Visible Luminescent RE-doped GaN, AlGaN and AlInN
  • Combined Excitation Emission Spectroscopy (CEES) of RE Ions in Gallium Nitride
  • Excitation Mechanisms of RE Ions in Semiconductors
  • High-Temperature Ferromagnetism in the Super-Dilute Magnetic Semiconductor GaN:Gd
  • Summary and Prospects for Future Work.

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