Fundamentals of Bias Temperature Instability in MOS Transistors Characterization Methods, Process and Materials Impact, DC and AC Modeling /

This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based mode...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: SpringerLink (Online service)
Otros Autores: Mahapatra, Souvik (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: New Delhi : Springer India : Imprint: Springer, 2016.
Edición:1st ed. 2016.
Colección:Springer Series in Advanced Microelectronics, 52
Temas:
Electronic circuits.
Electronics.
Condensed matter.
Electronic Circuits and Systems.
Electronics and Microelectronics, Instrumentation.
Condensed Matter Physics.
Acceso en línea:Texto Completo
Tabla de Contenidos:
  • Introduction: Bias Temperature Instability (BTI) in N and P Channel MOSFETs
  • Characterization Methods for BTI Degradation and Associated Gate Insulator Defects
  • Physical Mechanism of BTI Degradation - Direct Estimation of Trap Generation and Trapping
  • Physical Mechanism of BTI Degradation -Modeling of Process and Material Dependence
  • Reaction-Diffusion Model
  • Modeling of DC and AC NBTI Degradation and Recovery for SiON and HKMG MOSFETs
  • Index.

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