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Novel Three-state Quantum Dot Gate Field Effect Transistor Fabrication, Modeling and Applications /

The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Karmakar, Supriya (Autor)
Autor Corporativo: SpringerLink (Online service)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: New Delhi : Springer India : Imprint: Springer, 2014.
Edición:1st ed. 2014.
Temas:
Acceso en línea:Texto Completo
Descripción
Sumario:The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.
Descripción Física:XIV, 134 p. 121 illus., 49 illus. in color. online resource.
ISBN:9788132216353