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Multiscale Modeling in Epitaxial Growth
Epitaxy is a very active area of theoretical research since several years. It is experimentally well-explored and technologically relevant for thin film growth. Recently powerful numerical techniques in combination with a deep understanding of the physical and chemical phenomena during the growth pr...
| Clasificación: | Libro Electrónico |
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| Autor Corporativo: | |
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Basel :
Birkhäuser Basel : Imprint: Birkhäuser,
2005.
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| Edición: | 1st ed. 2005. |
| Colección: | International Series of Numerical Mathematics,
149 |
| Temas: | |
| Acceso en línea: | Texto Completo |
Tabla de Contenidos:
- Atomistic Models
- Lattice Gas Models and Kinetic Monte Carlo Simulations of Epitaxial Growth
- Cluster Diffusion and Island Formation on fcc(111) Metal Surfaces Studied by Atomic Scale Computer Simulations
- A Multiscale Study of the Epitaxial CVD of Si from Chlorosilanes
- Off-lattice Kinetic Monte Carlo Simulations of Strained Heteroepitaxial Growth
- Quasicontinuum Monte Carlo Simulation of Multilayer Surface Growth
- Step Flow Models
- to Step Dynamics and Step Instabilities
- A Finite Element Framework for Burton-Cabrera-Frank Equation
- Edge Diffusion in Phase-Field Models for Epitaxial Growth
- Discretisation and Numerical Tests of a Diffuse-Interface Model with Ehrlich-Schwoebel Barrier
- Islands in the Stream: Electromigration-Driven Shape Evolution with Crystal Anisotropy
- Simulation of Ostwald Ripening in Homoepitaxy
- Continuum Models
- Continuum Models for Surface Growth
- Configurational Continuum Modelling of Crystalline Surface Evolution
- On Level Set Formulations for Anisotropic Mean Curvature Flow and Surface Diffusion.