Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations

In this volume, Prof. Zhang reviews the systematic theoretical studies in his group on the growth mechanisms and properties of silicon quantum dots, nanotubes and nanowires, including: mechanisms of oxide-assisted growth of silicon nanowires, energetic stability of pristine silicon nanowires and nan...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Zhang, Rui-Qin (Autor)
Autor Corporativo: SpringerLink (Online service)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2014.
Edición:1st ed. 2014.
Colección:SpringerBriefs in Molecular Science,
Temas:
Chemistry, Physical and theoretical.
Nanotechnology.
Nanoscience.
Materials > Analysis.
Theoretical Chemistry.
Nanophysics.
Characterization and Analytical Technique.
Acceso en línea:Texto Completo
Tabla de Contenidos:
  • Introduction
  • Growth mechanism of silicon nanowires
  • Stability of silicon nanostructures
  • Novel electronic properties of silicon nanostructures
  • Summary and remarks.

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