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High Permittivity Gate Dielectric Materials
"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, me...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Berlin, Heidelberg :
Springer Berlin Heidelberg : Imprint: Springer,
2013.
|
| Edición: | 1st ed. 2013. |
| Colección: | Springer Series in Advanced Microelectronics,
43 |
| Temas: | |
| Acceso en línea: | Texto Completo |
MARC
| LEADER | 00000nam a22000005i 4500 | ||
|---|---|---|---|
| 001 | 978-3-642-36535-5 | ||
| 003 | DE-He213 | ||
| 005 | 20220116084436.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 130626s2013 gw | s |||| 0|eng d | ||
| 020 | |a 9783642365355 |9 978-3-642-36535-5 | ||
| 024 | 7 | |a 10.1007/978-3-642-36535-5 |2 doi | |
| 050 | 4 | |a TK7800-8360 | |
| 072 | 7 | |a TJF |2 bicssc | |
| 072 | 7 | |a TEC008000 |2 bisacsh | |
| 072 | 7 | |a TJF |2 thema | |
| 082 | 0 | 4 | |a 621.381 |2 23 |
| 245 | 1 | 0 | |a High Permittivity Gate Dielectric Materials |h [electronic resource] / |c edited by Samares Kar. |
| 250 | |a 1st ed. 2013. | ||
| 264 | 1 | |a Berlin, Heidelberg : |b Springer Berlin Heidelberg : |b Imprint: Springer, |c 2013. | |
| 300 | |a XXXII, 489 p. 325 illus., 168 illus. in color. |b online resource. | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 347 | |a text file |b PDF |2 rda | ||
| 490 | 1 | |a Springer Series in Advanced Microelectronics, |x 2197-6643 ; |v 43 | |
| 505 | 0 | |a Historical Perspectives -- High Mobility Channels -- Non-Volatile Memory -- Hafnium-Based Gate Dielectric Materials -- Lanthanum-Based High-K Gate Dielectric Materials -- Crystalline High-K Gate Dielectric Materials -- High-K Gate Dielectric Processing.- Metal Gate Electrodes -- Flat-Band/Threshold Voltage Control -- Interfaces and Defects -- Electrical Characterization and Parameter Extraction -- Non-Contact Metrology of High-K Gate Dielectrics -- Channel Mobility -- High-K Gate Dielectric Reliability Issues -- Bias Temperature Instability -- Integration Issues. . | |
| 520 | |a "The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects.". | ||
| 650 | 0 | |a Electronics. | |
| 650 | 0 | |a Optical materials. | |
| 650 | 0 | |a Condensed matter. | |
| 650 | 0 | |a Spectrum analysis. | |
| 650 | 0 | |a Engineering. | |
| 650 | 1 | 4 | |a Electronics and Microelectronics, Instrumentation. |
| 650 | 2 | 4 | |a Optical Materials. |
| 650 | 2 | 4 | |a Condensed Matter Physics. |
| 650 | 2 | 4 | |a Spectroscopy. |
| 650 | 2 | 4 | |a Technology and Engineering. |
| 700 | 1 | |a Kar, Samares. |e editor. |4 edt |4 http://id.loc.gov/vocabulary/relators/edt | |
| 710 | 2 | |a SpringerLink (Online service) | |
| 773 | 0 | |t Springer Nature eBook | |
| 776 | 0 | 8 | |i Printed edition: |z 9783642365362 |
| 776 | 0 | 8 | |i Printed edition: |z 9783642365348 |
| 776 | 0 | 8 | |i Printed edition: |z 9783662501382 |
| 830 | 0 | |a Springer Series in Advanced Microelectronics, |x 2197-6643 ; |v 43 | |
| 856 | 4 | 0 | |u https://doi.uam.elogim.com/10.1007/978-3-642-36535-5 |z Texto Completo |
| 912 | |a ZDB-2-ENG | ||
| 912 | |a ZDB-2-SXE | ||
| 950 | |a Engineering (SpringerNature-11647) | ||
| 950 | |a Engineering (R0) (SpringerNature-43712) | ||