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Low Power and Reliable SRAM Memory Cell and Array Design
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because iss...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Berlin, Heidelberg :
Springer Berlin Heidelberg : Imprint: Springer,
2011.
|
| Edición: | 1st ed. 2011. |
| Colección: | Springer Series in Advanced Microelectronics,
31 |
| Temas: | |
| Acceso en línea: | Texto Completo |
MARC
| LEADER | 00000nam a22000005i 4500 | ||
|---|---|---|---|
| 001 | 978-3-642-19568-6 | ||
| 003 | DE-He213 | ||
| 005 | 20220118184954.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 110816s2011 gw | s |||| 0|eng d | ||
| 020 | |a 9783642195686 |9 978-3-642-19568-6 | ||
| 024 | 7 | |a 10.1007/978-3-642-19568-6 |2 doi | |
| 050 | 4 | |a TK7800-8360 | |
| 072 | 7 | |a TJF |2 bicssc | |
| 072 | 7 | |a TEC008000 |2 bisacsh | |
| 072 | 7 | |a TJF |2 thema | |
| 082 | 0 | 4 | |a 621.381 |2 23 |
| 245 | 1 | 0 | |a Low Power and Reliable SRAM Memory Cell and Array Design |h [electronic resource] / |c edited by Koichiro Ishibashi, Kenichi Osada. |
| 250 | |a 1st ed. 2011. | ||
| 264 | 1 | |a Berlin, Heidelberg : |b Springer Berlin Heidelberg : |b Imprint: Springer, |c 2011. | |
| 300 | |a XII, 144 p. |b online resource. | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 347 | |a text file |b PDF |2 rda | ||
| 490 | 1 | |a Springer Series in Advanced Microelectronics, |x 2197-6643 ; |v 31 | |
| 505 | 0 | |a Preface -- Introduction -- Fundamentals of SRAM Memory Cell -- Electrical Stability -- Sensitivity Analysis -- Memory Cell Design Technique for Low Power SOC -- Array Design Techniques -- Dummy Cell Design -- Reliable Memory Cell Design -- Future Technologies. | |
| 520 | |a Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design. | ||
| 650 | 0 | |a Electronics. | |
| 650 | 0 | |a Engineering. | |
| 650 | 1 | 4 | |a Electronics and Microelectronics, Instrumentation. |
| 650 | 2 | 4 | |a Technology and Engineering. |
| 700 | 1 | |a Ishibashi, Koichiro. |e editor. |4 edt |4 http://id.loc.gov/vocabulary/relators/edt | |
| 700 | 1 | |a Osada, Kenichi. |e editor. |4 edt |4 http://id.loc.gov/vocabulary/relators/edt | |
| 710 | 2 | |a SpringerLink (Online service) | |
| 773 | 0 | |t Springer Nature eBook | |
| 776 | 0 | 8 | |i Printed edition: |z 9783642195679 |
| 776 | 0 | 8 | |i Printed edition: |z 9783642270185 |
| 776 | 0 | 8 | |i Printed edition: |z 9783642195693 |
| 830 | 0 | |a Springer Series in Advanced Microelectronics, |x 2197-6643 ; |v 31 | |
| 856 | 4 | 0 | |u https://doi.uam.elogim.com/10.1007/978-3-642-19568-6 |z Texto Completo |
| 912 | |a ZDB-2-ENG | ||
| 912 | |a ZDB-2-SXE | ||
| 950 | |a Engineering (SpringerNature-11647) | ||
| 950 | |a Engineering (R0) (SpringerNature-43712) | ||