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Transport in Metal-Oxide-Semiconductor Structures Mobile Ions Effects on the Oxide Properties /
This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Autor Corporativo: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Berlin, Heidelberg :
Springer Berlin Heidelberg : Imprint: Springer,
2011.
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| Edición: | 1st ed. 2011. |
| Colección: | Engineering Materials,
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| Temas: | |
| Acceso en línea: | Texto Completo |
MARC
| LEADER | 00000nam a22000005i 4500 | ||
|---|---|---|---|
| 001 | 978-3-642-16304-3 | ||
| 003 | DE-He213 | ||
| 005 | 20220116091917.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 110112s2011 gw | s |||| 0|eng d | ||
| 020 | |a 9783642163043 |9 978-3-642-16304-3 | ||
| 024 | 7 | |a 10.1007/978-3-642-16304-3 |2 doi | |
| 050 | 4 | |a QC374-379 | |
| 072 | 7 | |a TJFD |2 bicssc | |
| 072 | 7 | |a TEC021020 |2 bisacsh | |
| 072 | 7 | |a TGMM |2 thema | |
| 082 | 0 | 4 | |a 620.11295 |2 23 |
| 100 | 1 | |a Bentarzi, Hamid. |e author. |4 aut |4 http://id.loc.gov/vocabulary/relators/aut | |
| 245 | 1 | 0 | |a Transport in Metal-Oxide-Semiconductor Structures |h [electronic resource] : |b Mobile Ions Effects on the Oxide Properties / |c by Hamid Bentarzi. |
| 250 | |a 1st ed. 2011. | ||
| 264 | 1 | |a Berlin, Heidelberg : |b Springer Berlin Heidelberg : |b Imprint: Springer, |c 2011. | |
| 300 | |a XIV, 106 p. |b online resource. | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 347 | |a text file |b PDF |2 rda | ||
| 490 | 1 | |a Engineering Materials, |x 1868-1212 | |
| 505 | 0 | |a Introduction -- The MOS Structure -- The MOS Oxide and Its Defects -- Review of Transport Mechanism in Thin Oxides of MOS Devices -- Experimental Techniques -- Theoretical Approaches of Mobile Ions Density Distribution Determination -- Theoretical Model of Mobile Ions Distribution and Ionic Current in the MOS Oxide. | |
| 520 | |a This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures. | ||
| 650 | 0 | |a Optical materials. | |
| 650 | 0 | |a Semiconductors. | |
| 650 | 0 | |a Materials-Analysis. | |
| 650 | 0 | |a Condensed matter. | |
| 650 | 1 | 4 | |a Optical Materials. |
| 650 | 2 | 4 | |a Semiconductors. |
| 650 | 2 | 4 | |a Characterization and Analytical Technique. |
| 650 | 2 | 4 | |a Condensed Matter Physics. |
| 710 | 2 | |a SpringerLink (Online service) | |
| 773 | 0 | |t Springer Nature eBook | |
| 776 | 0 | 8 | |i Printed edition: |z 9783642266881 |
| 776 | 0 | 8 | |i Printed edition: |z 9783642163036 |
| 776 | 0 | 8 | |i Printed edition: |z 9783642163050 |
| 830 | 0 | |a Engineering Materials, |x 1868-1212 | |
| 856 | 4 | 0 | |u https://doi.uam.elogim.com/10.1007/978-3-642-16304-3 |z Texto Completo |
| 912 | |a ZDB-2-CMS | ||
| 912 | |a ZDB-2-SXC | ||
| 950 | |a Chemistry and Materials Science (SpringerNature-11644) | ||
| 950 | |a Chemistry and Material Science (R0) (SpringerNature-43709) | ||