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00000nam a22000005i 4500 |
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978-3-642-11125-9 |
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DE-He213 |
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20220126101532.0 |
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110113s2011 gw | s |||| 0|eng d |
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|a 9783642111259
|9 978-3-642-11125-9
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|a 10.1007/978-3-642-11125-9
|2 doi
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|a TK7800-8360
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|a 621.381
|2 23
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|a Lutz, Josef.
|e author.
|4 aut
|4 http://id.loc.gov/vocabulary/relators/aut
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|a Semiconductor Power Devices
|h [electronic resource] :
|b Physics, Characteristics, Reliability /
|c by Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker.
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|a 1st ed. 2011.
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|a Berlin, Heidelberg :
|b Springer Berlin Heidelberg :
|b Imprint: Springer,
|c 2011.
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|a XII, 536 p.
|b online resource.
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|a text
|b txt
|2 rdacontent
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|a computer
|b c
|2 rdamedia
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|a online resource
|b cr
|2 rdacarrier
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|a text file
|b PDF
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|a Power Semiconductor Devices - Key Components for Efficient Electrical Energy Conversion Systems -- Semiconductor Properties -- pn - Junctions -- Short introduction to power device technology -- pin-Diodes -- Schottky Diodes -- Bipolar Transistors -- Thyristors -- MOS Transistors -- IGBTs -- Packaging and Reliability of Power Devices -- Destructive Mechanisms in Power Devices -- Power Device Induced Oscillations and Electromagnetic Disturbances -- Power Electronic Systems -- Appendix -- Index.
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|a Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Wear and aging mechanisms are identified and reliability analyses principles are developed. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices. Also parasitic effects, such as device induced electromagnetic interference problems, are addressed. The book concludes with modern power electronic system integration techniques and trends.
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|a Electronics.
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|a Electric power production.
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|a Condensed matter.
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|a Electronics and Microelectronics, Instrumentation.
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|a Electrical Power Engineering.
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|a Condensed Matter Physics.
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1 |
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|a Schlangenotto, Heinrich.
|e author.
|4 aut
|4 http://id.loc.gov/vocabulary/relators/aut
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1 |
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|a Scheuermann, Uwe.
|e author.
|4 aut
|4 http://id.loc.gov/vocabulary/relators/aut
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700 |
1 |
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|a De Doncker, Rik.
|e author.
|4 aut
|4 http://id.loc.gov/vocabulary/relators/aut
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710 |
2 |
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|a SpringerLink (Online service)
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|t Springer Nature eBook
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|i Printed edition:
|z 9783642111266
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776 |
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|i Printed edition:
|z 9783642111242
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|i Printed edition:
|z 9783642423482
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|u https://doi.uam.elogim.com/10.1007/978-3-642-11125-9
|z Texto Completo
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|a ZDB-2-ENG
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|a ZDB-2-SXE
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|a Engineering (SpringerNature-11647)
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|a Engineering (R0) (SpringerNature-43712)
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