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Transport Equations for Semiconductors

Semiconductor devices are ubiquitous in the modern computer and telecommunications industry. A precise knowledge of the transport equations for electron flow in semiconductors when a voltage is applied is therefore of paramount importance for further technological breakthroughs. In the present work,...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Jüngel, Ansgar (Autor)
Autor Corporativo: SpringerLink (Online service)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2009.
Edición:1st ed. 2009.
Colección:Lecture Notes in Physics, 773
Temas:
Acceso en línea:Texto Completo

MARC

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245 1 0 |a Transport Equations for Semiconductors  |h [electronic resource] /  |c by Ansgar Jüngel. 
250 |a 1st ed. 2009. 
264 1 |a Berlin, Heidelberg :  |b Springer Berlin Heidelberg :  |b Imprint: Springer,  |c 2009. 
300 |a XVII, 315 p. 27 illus.  |b online resource. 
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490 1 |a Lecture Notes in Physics,  |x 1616-6361 ;  |v 773 
505 0 |a Basic Semiconductor Physics -- Microscopic Semi-Classical Models -- Derivation of Macroscopic Equations -- Collisionless Models -- Scattering Models -- Macroscopic Semi-Classical Models -- Drift-Diffusion Equations -- Energy-Transport Equations -- Spherical Harmonics Expansion Equations -- Diffusive Higher-Order Moment Equations -- Hydrodynamic Equations -- Microscopic Quantum Models -- The Schr#x00F6;dinger Equation -- The Wigner Equation -- Macroscopic Quantum Models -- Quantum Drift-Diffusion Equations -- Quantum Diffusive Higher-Order Moment Equations -- Quantum Hydrodynamic Equations. 
520 |a Semiconductor devices are ubiquitous in the modern computer and telecommunications industry. A precise knowledge of the transport equations for electron flow in semiconductors when a voltage is applied is therefore of paramount importance for further technological breakthroughs. In the present work, the author tackles their derivation in a systematic and rigorous way, depending on certain key parameters such as the number of free electrons in the device, the mean free path of the carriers, the device dimensions and the ambient temperature. Accordingly a hierarchy of models is examined which is reflected in the structure of the book: first the microscopic and macroscopic semi-classical approaches followed by their quantum-mechanical counterparts. 
650 0 |a Condensed matter. 
650 0 |a Spectrum analysis. 
650 0 |a Optical materials. 
650 0 |a Mathematical physics. 
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650 2 4 |a Spectroscopy. 
650 2 4 |a Optical Materials. 
650 2 4 |a Mathematical Methods in Physics. 
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830 0 |a Lecture Notes in Physics,  |x 1616-6361 ;  |v 773 
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