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Extended Defects in Germanium Fundamental and Technological Aspects /
The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic s...
| Clasificación: | Libro Electrónico |
|---|---|
| Autores principales: | , |
| Autor Corporativo: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Berlin, Heidelberg :
Springer Berlin Heidelberg : Imprint: Springer,
2009.
|
| Edición: | 1st ed. 2009. |
| Colección: | Springer Series in Materials Science,
118 |
| Temas: | |
| Acceso en línea: | Texto Completo |
MARC
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| 001 | 978-3-540-85614-6 | ||
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| 100 | 1 | |a Claeys, Cor. |e author. |4 aut |4 http://id.loc.gov/vocabulary/relators/aut | |
| 245 | 1 | 0 | |a Extended Defects in Germanium |h [electronic resource] : |b Fundamental and Technological Aspects / |c by Cor Claeys, Eddy Simoen. |
| 250 | |a 1st ed. 2009. | ||
| 264 | 1 | |a Berlin, Heidelberg : |b Springer Berlin Heidelberg : |b Imprint: Springer, |c 2009. | |
| 300 | |a XX, 300 p. |b online resource. | ||
| 336 | |a text |b txt |2 rdacontent | ||
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| 490 | 1 | |a Springer Series in Materials Science, |x 2196-2812 ; |v 118 | |
| 505 | 0 | |a Dislocations in Germanium: Mechanical Properties -- Electrical and Optical Properties -- Grain Boundaries in Germanium -- Germanium-Based Substrate Defects -- Process-Induced Defects in Germanium. | |
| 520 | |a The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the electrical and optical properties, which are important for devices made in dislocated Ge. The second part treats the creation of extended defects during wafer and device processing. Issues are addressed such as defect formation during ion implantation, necessary to create junctions, which are an essential part in every device type. Extended defects are also created during the deposition of thin or thick epitaxial layers on other substrates, which are important for optoelectronic and photovoltaic applications. In brief, the book is intended to provide a fundamental understanding of the extended-defect formation during Ge materials and device processing, providing ways to distinguish harmful from less detrimental defects and should point out ways for defect engineering and control. | ||
| 650 | 0 | |a Optical materials. | |
| 650 | 0 | |a Condensed matter. | |
| 650 | 0 | |a Engineering. | |
| 650 | 1 | 4 | |a Optical Materials. |
| 650 | 2 | 4 | |a Condensed Matter Physics. |
| 650 | 2 | 4 | |a Technology and Engineering. |
| 700 | 1 | |a Simoen, Eddy. |e author. |4 aut |4 http://id.loc.gov/vocabulary/relators/aut | |
| 710 | 2 | |a SpringerLink (Online service) | |
| 773 | 0 | |t Springer Nature eBook | |
| 776 | 0 | 8 | |i Printed edition: |z 9783540856870 |
| 776 | 0 | 8 | |i Printed edition: |z 9783642099212 |
| 776 | 0 | 8 | |i Printed edition: |z 9783540856115 |
| 830 | 0 | |a Springer Series in Materials Science, |x 2196-2812 ; |v 118 | |
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| 950 | |a Chemistry and Material Science (R0) (SpringerNature-43709) | ||