Advances in Solid State Physics 47

The present volume 47 of the Advances in Solid State Physics contains the written version of a large number of the invited talks of the 2007 Spring Meeting of the Arbeitskreis Festkörperphysik which was held in Regensburg, Germany, from March 26 to 30, 2007 in conjunction with the 71st Annual Meeti...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: SpringerLink (Online service)
Otros Autores: Haug, Rolf (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2008.
Edición:1st ed. 2008.
Colección:Advances in Solid State Physics, 47
Temas:
Condensed matter.
Spectrum analysis.
Materials science.
Superconductivity.
Superconductors.
Engineering.
Condensed Matter Physics.
Spectroscopy.
Materials Science.
Technology and Engineering.
Acceso en línea:Texto Completo
Tabla de Contenidos:
  • Quantum Dots and Wires
  • Emission Characteristics, Photon Statistics and Coherence Properties of high-? Semiconductor Micropillar Lasers
  • Optical Microtube Ring Cavities
  • Wide-Bandgap Quantum Dot Based Microcavity VCSEL Structures
  • Momentum Space Wave Functions in InAs Quantum Dots Mapped by Capacitance Voltage Spectroscopy
  • Coupling Phenomena in Dual Electron Waveguide Structures
  • Correlation Effects
  • Electronic Correlations in Electron Transfer Systems
  • Criticality and Correlations in Cold Atomic Gases
  • Ferromagnetic Films and Particles
  • Magnetic Anisotropy and Magnetization Switching in Ferromagnetic GaMnAs
  • Highly Spin-Polarized Tunneling in Fully Epitaxial Magnetic Tunnel Junctions with a Co-Based Full-Heusler Alloy Thin Film and a MgO Barrier
  • Structural and Magnetic Properties of Transition Metal Nanoparticles from First Principles
  • First-Principles Study of Ferromagnetic Heusler Alloys: An Overview
  • Graphene
  • Dirac Particles in Epitaxial Graphene Films Grown on SiC
  • Photoemission Studies of Graphene on SiC: Growth, Interface, and Electronic Structure
  • Raman Imaging and Electronic Properties of Graphene
  • THz-Physics
  • Interaction of Semiconductor Laser Dynamics with THz Radiation
  • Ultrafast THz Spectroscopy of Excitons in Multi-Component Carrier Gases
  • Terahertz Near-Field Microscopy
  • Interaction of THz Radiation with Semiconductors: Microscopic Theory and Experiments
  • Nonlinear Terahertz and Midinfrared Response of n-Type GaAs
  • Defects, Dislocations and Strain
  • Effect of Hydrogen and Grain Boundaries on Dislocation Nucleation and Multiplication Examined with a NI-AFM
  • Tuning the Strain in LaCoO3 Thin Films by the Heteroepitaxial Growth on Single Crystal Substrates
  • Atomic Migration Phenomena in Intermetallics with High Superstructure Stability
  • Material Science with Positrons: From Doppler Spectroscopy to Failure Prediction
  • X-Ray Diffraction Residual Stress Analysis: One of the Few Advanced Physical Measuring Techniques That Have Established Themselves for Routine Application in Industry
  • Piezoelectric Graded Materials - Preparation and Characterization
  • Materials
  • 59Co, 23Na, and 1H NMR Studies of Double-Layer Hydrated Superconductors NaxCoO2 · yH2O.

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