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Gallium Nitride Electronics
Gallium Nitride Electronics covers developments in III-N semiconductor-based electronics with a focus on high-power and high-speed RF applications. Material properties of III-N semiconductors and substrates; the state-of-the-art of devices and circuits, epitaxial growth, device technology, modelling...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Autor Corporativo: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Berlin, Heidelberg :
Springer Berlin Heidelberg : Imprint: Springer,
2008.
|
| Edición: | 1st ed. 2008. |
| Colección: | Springer Series in Materials Science,
96 |
| Temas: | |
| Acceso en línea: | Texto Completo |
MARC
| LEADER | 00000nam a22000005i 4500 | ||
|---|---|---|---|
| 001 | 978-3-540-71892-5 | ||
| 003 | DE-He213 | ||
| 005 | 20220114221016.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 100301s2008 gw | s |||| 0|eng d | ||
| 020 | |a 9783540718925 |9 978-3-540-71892-5 | ||
| 024 | 7 | |a 10.1007/978-3-540-71892-5 |2 doi | |
| 050 | 4 | |a QC374-379 | |
| 072 | 7 | |a TJFD |2 bicssc | |
| 072 | 7 | |a TEC021020 |2 bisacsh | |
| 072 | 7 | |a TGMM |2 thema | |
| 082 | 0 | 4 | |a 620.11295 |2 23 |
| 100 | 1 | |a Quay, Rüdiger. |e author. |4 aut |4 http://id.loc.gov/vocabulary/relators/aut | |
| 245 | 1 | 0 | |a Gallium Nitride Electronics |h [electronic resource] / |c by Rüdiger Quay. |
| 250 | |a 1st ed. 2008. | ||
| 264 | 1 | |a Berlin, Heidelberg : |b Springer Berlin Heidelberg : |b Imprint: Springer, |c 2008. | |
| 300 | |a XXIX, 470 p. |b online resource. | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 347 | |a text file |b PDF |2 rda | ||
| 490 | 1 | |a Springer Series in Materials Science, |x 2196-2812 ; |v 96 | |
| 505 | 0 | |a III-N Materials, and the State-of-the-Art of Devices and Circuits -- Epitaxy for III-N-Based Electronic Devices -- Device Processing Technology -- Device Characterization and Modeling -- Circuit Considerations and III-N Examples -- Reliability Aspects and High-Temperature Operation -- Integration, Thermal Management, and Packaging -- Outlook. | |
| 520 | |a Gallium Nitride Electronics covers developments in III-N semiconductor-based electronics with a focus on high-power and high-speed RF applications. Material properties of III-N semiconductors and substrates; the state-of-the-art of devices and circuits, epitaxial growth, device technology, modelling and characterization; and circuit examples are discussed. The book concludes with device reliability aspects and an overview of integration and packaging. This comprehensive monograph and tutorial is based on more than a decade of research on materials, devices, and circuits. It is of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; and to all scientists with a general interest in advanced electronics. | ||
| 650 | 0 | |a Optical materials. | |
| 650 | 0 | |a Lasers. | |
| 650 | 0 | |a Engineering. | |
| 650 | 0 | |a Electronics. | |
| 650 | 1 | 4 | |a Optical Materials. |
| 650 | 2 | 4 | |a Laser. |
| 650 | 2 | 4 | |a Technology and Engineering. |
| 650 | 2 | 4 | |a Electronics and Microelectronics, Instrumentation. |
| 710 | 2 | |a SpringerLink (Online service) | |
| 773 | 0 | |t Springer Nature eBook | |
| 776 | 0 | 8 | |i Printed edition: |z 9783642090981 |
| 776 | 0 | 8 | |i Printed edition: |z 9783540848288 |
| 776 | 0 | 8 | |i Printed edition: |z 9783540718901 |
| 830 | 0 | |a Springer Series in Materials Science, |x 2196-2812 ; |v 96 | |
| 856 | 4 | 0 | |u https://doi.uam.elogim.com/10.1007/978-3-540-71892-5 |z Texto Completo |
| 912 | |a ZDB-2-CMS | ||
| 912 | |a ZDB-2-SXC | ||
| 950 | |a Chemistry and Materials Science (SpringerNature-11644) | ||
| 950 | |a Chemistry and Material Science (R0) (SpringerNature-43709) | ||