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Advanced Gate Stacks for High-Mobility Semiconductors
Will nanoelectronic devices continue to scale according to Moore's law? At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained S...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | , , , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Berlin, Heidelberg :
Springer Berlin Heidelberg : Imprint: Springer,
2007.
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| Edición: | 1st ed. 2007. |
| Colección: | Springer Series in Advanced Microelectronics,
27 |
| Temas: | |
| Acceso en línea: | Texto Completo |
Tabla de Contenidos:
- Strained-Si CMOS Technology
- High Current Drivability MOSFET Fabricated on Si(110) Surface
- Advanced High-Mobility Semiconductor-on-Insulator Materials
- Passivation and Characterization of Germanium Surfaces
- Interface Engineering for High-? Ge MOSFETs
- Effect of Surface Nitridation on the Electrical Characteristics of Germanium High-?/Metal Gate Metal-Oxide-Semiconductor Devices
- Modeling of Growth of High-? Oxides on Semiconductors
- Physical, Chemical, and Electrical Characterization of High-? Dielectrics on Ge and GaAs
- Point Defects in Stacks of High-? Metal Oxides on Ge: Contrast with the Si Case
- High ? Gate Dielectrics for Compound Semiconductors
- Interface Properties of High-? Dielectrics on Germanium
- A Theoretical View on the Dielectric Properties of Crystalline and Amorphous High-? Materials and Films
- Germanium Nanodevices and Technology
- Opportunities and Challenges of Germanium Channel MOSFETs
- Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates
- Processing and Characterization of III-V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics
- Fabrication of MBE High-? MOSFETs in a Standard CMOS Flow.