Ion Implantation and Synthesis of Materials

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implant...

Descripción completa

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autores principales: Nastasi, Michael (Autor), Mayer, James W. (Autor)
Autor Corporativo: SpringerLink (Online service)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2006.
Edición:1st ed. 2006.
Temas:
Particle accelerators.
Condensed matter.
Optical materials.
Materials-Analysis.
Physical chemistry.
Accelerator Physics.
Condensed Matter Physics.
Optical Materials.
Characterization and Analytical Technique.
Physical Chemistry.
Acceso en línea:Texto Completo
Tabla de Contenidos:
  • General Features and Fundamental Concepts
  • Particle Interactions
  • Dynamics of Binary Elastic Collisions
  • Cross-Section
  • Ion Stopping
  • Ion Range and Range Distribution
  • Displacements and Radiation Damage
  • Channeling
  • Doping, Diffusion and Defects in Ion-Implanted Si
  • Crystallization and Regrowth of Amorphous Si
  • Si Slicing and Layer Transfer: Ion-Cut
  • Surface Erosion During Implantation: Sputtering
  • Ion-Induced Atomic Intermixing at the Interface: Ion Beam Mixing
  • Application of Ion Implantation Techniques in CMOS Fabrication
  • Ion implantation in CMOS Technology: Machine Challenges.

Ejemplares similares