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Ion Implantation and Synthesis of Materials
Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implant...
| Clasificación: | Libro Electrónico |
|---|---|
| Autores principales: | , |
| Autor Corporativo: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Berlin, Heidelberg :
Springer Berlin Heidelberg : Imprint: Springer,
2006.
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| Edición: | 1st ed. 2006. |
| Temas: | |
| Acceso en línea: | Texto Completo |
MARC
| LEADER | 00000nam a22000005i 4500 | ||
|---|---|---|---|
| 001 | 978-3-540-45298-0 | ||
| 003 | DE-He213 | ||
| 005 | 20220118234625.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 100301s2006 gw | s |||| 0|eng d | ||
| 020 | |a 9783540452980 |9 978-3-540-45298-0 | ||
| 024 | 7 | |a 10.1007/978-3-540-45298-0 |2 doi | |
| 050 | 4 | |a QC787.P3 | |
| 072 | 7 | |a PHP |2 bicssc | |
| 072 | 7 | |a SCI051000 |2 bisacsh | |
| 072 | 7 | |a PHP |2 thema | |
| 082 | 0 | 4 | |a 539.73 |2 23 |
| 100 | 1 | |a Nastasi, Michael. |e author. |4 aut |4 http://id.loc.gov/vocabulary/relators/aut | |
| 245 | 1 | 0 | |a Ion Implantation and Synthesis of Materials |h [electronic resource] / |c by Michael Nastasi, James W. Mayer. |
| 250 | |a 1st ed. 2006. | ||
| 264 | 1 | |a Berlin, Heidelberg : |b Springer Berlin Heidelberg : |b Imprint: Springer, |c 2006. | |
| 300 | |a XIV, 263 p. 131 illus. |b online resource. | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 347 | |a text file |b PDF |2 rda | ||
| 505 | 0 | |a General Features and Fundamental Concepts -- Particle Interactions -- Dynamics of Binary Elastic Collisions -- Cross-Section -- Ion Stopping -- Ion Range and Range Distribution -- Displacements and Radiation Damage -- Channeling -- Doping, Diffusion and Defects in Ion-Implanted Si -- Crystallization and Regrowth of Amorphous Si -- Si Slicing and Layer Transfer: Ion-Cut -- Surface Erosion During Implantation: Sputtering -- Ion-Induced Atomic Intermixing at the Interface: Ion Beam Mixing -- Application of Ion Implantation Techniques in CMOS Fabrication -- Ion implantation in CMOS Technology: Machine Challenges. | |
| 520 | |a Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described. | ||
| 650 | 0 | |a Particle accelerators. | |
| 650 | 0 | |a Condensed matter. | |
| 650 | 0 | |a Optical materials. | |
| 650 | 0 | |a Materials-Analysis. | |
| 650 | 0 | |a Physical chemistry. | |
| 650 | 1 | 4 | |a Accelerator Physics. |
| 650 | 2 | 4 | |a Condensed Matter Physics. |
| 650 | 2 | 4 | |a Optical Materials. |
| 650 | 2 | 4 | |a Characterization and Analytical Technique. |
| 650 | 2 | 4 | |a Physical Chemistry. |
| 700 | 1 | |a Mayer, James W. |e author. |4 aut |4 http://id.loc.gov/vocabulary/relators/aut | |
| 710 | 2 | |a SpringerLink (Online service) | |
| 773 | 0 | |t Springer Nature eBook | |
| 776 | 0 | 8 | |i Printed edition: |z 9783642062599 |
| 776 | 0 | 8 | |i Printed edition: |z 9783540804826 |
| 776 | 0 | 8 | |i Printed edition: |z 9783540236740 |
| 856 | 4 | 0 | |u https://doi.uam.elogim.com/10.1007/978-3-540-45298-0 |z Texto Completo |
| 912 | |a ZDB-2-PHA | ||
| 912 | |a ZDB-2-SXP | ||
| 950 | |a Physics and Astronomy (SpringerNature-11651) | ||
| 950 | |a Physics and Astronomy (R0) (SpringerNature-43715) | ||