Sputtering by Particle Bombardment Experiments and Computer Calculations from Threshold to MeV Energies /

This volume gives a comprehensive overview about the physical processes causing sputtering of solids at bombardment with energetic ions. The most important quantities are the sputtering yields, i.e. the average number of atoms eroded per incident ion. The latest results for the sputtering yields and...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: SpringerLink (Online service)
Otros Autores: Behrisch, Rainer (Editor ), Eckstein, Wolfgang (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2007.
Edición:1st ed. 2007.
Colección:Topics in Applied Physics, 110
Temas:
Surfaces (Technology).
Thin films.
Atoms.
Molecules.
Plasma (Ionized gases).
Surfaces, Interfaces and Thin Film.
Atoms and molecules in external fields.
Plasma Physics.
Acceso en línea:Texto Completo

MARC

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245 1 0 |a Sputtering by Particle Bombardment  |h [electronic resource] :  |b Experiments and Computer Calculations from Threshold to MeV Energies /  |c edited by Rainer Behrisch, Wolfgang Eckstein. 
250 |a 1st ed. 2007. 
264 1 |a Berlin, Heidelberg :  |b Springer Berlin Heidelberg :  |b Imprint: Springer,  |c 2007. 
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490 1 |a Topics in Applied Physics,  |x 1437-0859 ;  |v 110 
505 0 |a and Overview -- Computer Simulation of the Sputtering Process -- Sputtering Yields -- Results of Molecular Dynamics Calculations -- Energy and Angular Distributions of Sputtered Species -- Chemical Sputtering -- Electronic Sputtering with Swift Heavy Ions. 
520 |a This volume gives a comprehensive overview about the physical processes causing sputtering of solids at bombardment with energetic ions. The most important quantities are the sputtering yields, i.e. the average number of atoms eroded per incident ion. The latest results for the sputtering yields and their dependence on the incident energy and angle of incidence, as well as the energy and angular distributions of the sputtered atoms are presented. This concerns experimentally determined yields as well as a critical evaluation of the computational methods used to calculate the yields and distributions. The energies of the incident ions cover the range between a few eV up to several MeV. The influence of chemical effects between the incident ions and the atoms of the bombarded solid on the sputtering yields are also reviewed. 
650 0 |a Surfaces (Technology). 
650 0 |a Thin films. 
650 0 |a Atoms. 
650 0 |a Molecules. 
650 0 |a Plasma (Ionized gases). 
650 1 4 |a Surfaces, Interfaces and Thin Film. 
650 2 4 |a Atoms and molecules in external fields. 
650 2 4 |a Plasma Physics. 
700 1 |a Behrisch, Rainer.  |e editor.  |4 edt  |4 http://id.loc.gov/vocabulary/relators/edt 
700 1 |a Eckstein, Wolfgang.  |e editor.  |4 edt  |4 http://id.loc.gov/vocabulary/relators/edt 
710 2 |a SpringerLink (Online service) 
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830 0 |a Topics in Applied Physics,  |x 1437-0859 ;  |v 110 
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950 |a Physics and Astronomy (SpringerNature-11651) 
950 |a Physics and Astronomy (R0) (SpringerNature-43715) 

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