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Lifetime Spectroscopy A Method of Defect Characterization in Silicon for Photovoltaic Applications /
Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. Th...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Autor Corporativo: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Berlin, Heidelberg :
Springer Berlin Heidelberg : Imprint: Springer,
2005.
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| Edición: | 1st ed. 2005. |
| Colección: | Springer Series in Materials Science,
85 |
| Temas: | |
| Acceso en línea: | Texto Completo |
Tabla de Contenidos:
- Theory of carrier lifetime in silicon
- Lifetime measurement techniques
- Theory of lifetime spectroscopy
- Defect characterization on intentionally metal-contaminated silicon samples
- The metastable defect in boron-doped Czochralski silicon
- Summary and further work
- Zusammenfassung und Ausblick.