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Progress in Nano-Electro Optics IV Characterization of Nano-Optical Materials and Optical Near-Field Interactions /
This volume focuses on the characterization of nano-optical materials and optical-near field interactions. It begins with the techniques for characterizing the magneto-optical Kerr effect and continues with methods to determine structural and optical properties in high-quality quantum wires with hig...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Berlin, Heidelberg :
Springer Berlin Heidelberg : Imprint: Springer,
2005.
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| Edición: | 1st ed. 2005. |
| Colección: | Springer Series in Optical Sciences,
109 |
| Temas: | |
| Acceso en línea: | Texto Completo |
MARC
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| 245 | 1 | 0 | |a Progress in Nano-Electro Optics IV |h [electronic resource] : |b Characterization of Nano-Optical Materials and Optical Near-Field Interactions / |c edited by Motoichi Ohtsu. |
| 250 | |a 1st ed. 2005. | ||
| 264 | 1 | |a Berlin, Heidelberg : |b Springer Berlin Heidelberg : |b Imprint: Springer, |c 2005. | |
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| 490 | 1 | |a Springer Series in Optical Sciences, |x 1556-1534 ; |v 109 | |
| 505 | 0 | |a Near-Field Imaging of Magnetic Domains -- Improvement of Interface Quality in Cleaved-Edge-Overgrowth GaAs Quantum Wires Based on Micro-optical Characterization -- Recombination Dynamics in InxGa1™xN-Based Nanostructures -- Quantum Theory of Radiation in Optical Near Field Based on Quantization of Evanescent Electromagnetic Waves Using Detector Mode. | |
| 520 | |a This volume focuses on the characterization of nano-optical materials and optical-near field interactions. It begins with the techniques for characterizing the magneto-optical Kerr effect and continues with methods to determine structural and optical properties in high-quality quantum wires with high spatial uniformity. Further topics include: near-field luminescence mapping in InGaN/GaN single quantum well structures in order to interpret the recombination mechanism in InGaN-based nano-structures; and theoretical treatment of the optical near field and optical near-field interactions, providing the basis for investigating the signal transport and associated dissipation in nano-optical devices. Taken as a whole, this overview will be a valuable resource for engineers and scientists working in the field of nano-electro-optics. | ||
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| 830 | 0 | |a Springer Series in Optical Sciences, |x 1556-1534 ; |v 109 | |
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