Silicon Quantum Integrated Circuits Silicon-Germanium Heterostructure Devices: Basics and Realisations /

Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mi...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autores principales: Kasper, E. (Autor), Paul, D.J (Autor)
Autor Corporativo: SpringerLink (Online service)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2005.
Edición:1st ed. 2005.
Colección:NanoScience and Technology,
Temas:
Optical materials.
Lasers.
Electronic circuits.
Condensed matter.
Nanotechnology.
Electronics.
Optical Materials.
Laser.
Electronic Circuits and Systems.
Condensed Matter Physics.
Electronics and Microelectronics, Instrumentation.
Acceso en línea:Texto Completo

MARC

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245 1 0 |a Silicon Quantum Integrated Circuits  |h [electronic resource] :  |b Silicon-Germanium Heterostructure Devices: Basics and Realisations /  |c by E. Kasper, D.J. Paul. 
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300 |a XII, 364 p.  |b online resource. 
336 |a text  |b txt  |2 rdacontent 
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505 0 |a Material Science -- Resumé of Semiconductor Physics -- Realisation of Potential Barriers -- Electronic Device Principles -- Heterostructure Bipolar Transistors - HBTs -- Hetero Field Effect Transistors (HFETs) -- Tunneling Phenomena -- Optoelectronics -- Integration -- Outlook. 
520 |a Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics. 
650 0 |a Optical materials. 
650 0 |a Lasers. 
650 0 |a Electronic circuits. 
650 0 |a Condensed matter. 
650 0 |a Nanotechnology. 
650 0 |a Electronics. 
650 1 4 |a Optical Materials. 
650 2 4 |a Laser. 
650 2 4 |a Electronic Circuits and Systems. 
650 2 4 |a Condensed Matter Physics. 
650 2 4 |a Nanotechnology. 
650 2 4 |a Electronics and Microelectronics, Instrumentation. 
700 1 |a Paul, D.J.  |e author.  |4 aut  |4 http://id.loc.gov/vocabulary/relators/aut 
710 2 |a SpringerLink (Online service) 
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950 |a Chemistry and Materials Science (SpringerNature-11644) 
950 |a Chemistry and Material Science (R0) (SpringerNature-43709) 

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