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Emerging Resistive Switching Memories

This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Ouyang, Jianyong (Autor)
Autor Corporativo: SpringerLink (Online service)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Cham : Springer International Publishing : Imprint: Springer, 2016.
Edición:1st ed. 2016.
Colección:SpringerBriefs in Materials,
Temas:
Acceso en línea:Texto Completo
Tabla de Contenidos:
  • Introduction to history of memory devices and the present memory devices
  • Introduction of resistive switches memory devices with nanoparticles
  • Structure, fabrication and operation of devices with a triple-layer structure sandwiched between two electrode
  • Structure, fabrication and operation of devices with a single layer structure sandwiched between two electrode
  • Resistive switching devices exploiting the charge transfer between metal electrode and metal nanoparticles
  • Mechanisms for resistive switches
  • Application of the resistive switching devices with nanoparticles.