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Emerging Resistive Switching Memories
This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Autor Corporativo: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Cham :
Springer International Publishing : Imprint: Springer,
2016.
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| Edición: | 1st ed. 2016. |
| Colección: | SpringerBriefs in Materials,
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| Temas: | |
| Acceso en línea: | Texto Completo |
MARC
| LEADER | 00000nam a22000005i 4500 | ||
|---|---|---|---|
| 001 | 978-3-319-31572-0 | ||
| 003 | DE-He213 | ||
| 005 | 20220119162147.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 160704s2016 sz | s |||| 0|eng d | ||
| 020 | |a 9783319315720 |9 978-3-319-31572-0 | ||
| 024 | 7 | |a 10.1007/978-3-319-31572-0 |2 doi | |
| 050 | 4 | |a T174.7 | |
| 050 | 4 | |a TA418.9.N35 | |
| 072 | 7 | |a TBN |2 bicssc | |
| 072 | 7 | |a TEC027000 |2 bisacsh | |
| 072 | 7 | |a TBN |2 thema | |
| 082 | 0 | 4 | |a 620.5 |2 23 |
| 100 | 1 | |a Ouyang, Jianyong. |e author. |4 aut |4 http://id.loc.gov/vocabulary/relators/aut | |
| 245 | 1 | 0 | |a Emerging Resistive Switching Memories |h [electronic resource] / |c by Jianyong Ouyang. |
| 250 | |a 1st ed. 2016. | ||
| 264 | 1 | |a Cham : |b Springer International Publishing : |b Imprint: Springer, |c 2016. | |
| 300 | |a VIII, 93 p. 73 illus., 41 illus. in color. |b online resource. | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 347 | |a text file |b PDF |2 rda | ||
| 490 | 1 | |a SpringerBriefs in Materials, |x 2192-1105 | |
| 505 | 0 | |a Introduction to history of memory devices and the present memory devices -- Introduction of resistive switches memory devices with nanoparticles -- Structure, fabrication and operation of devices with a triple-layer structure sandwiched between two electrode -- Structure, fabrication and operation of devices with a single layer structure sandwiched between two electrode -- Resistive switching devices exploiting the charge transfer between metal electrode and metal nanoparticles -- Mechanisms for resistive switches -- Application of the resistive switching devices with nanoparticles. | |
| 520 | |a This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices. | ||
| 650 | 0 | |a Nanotechnology. | |
| 650 | 0 | |a Electronic circuits. | |
| 650 | 0 | |a Electronics. | |
| 650 | 0 | |a Computer storage devices. | |
| 650 | 0 | |a Memory management (Computer science). | |
| 650 | 1 | 4 | |a Nanotechnology. |
| 650 | 2 | 4 | |a Electronic Circuits and Systems. |
| 650 | 2 | 4 | |a Electronics and Microelectronics, Instrumentation. |
| 650 | 2 | 4 | |a Computer Memory Structure. |
| 710 | 2 | |a SpringerLink (Online service) | |
| 773 | 0 | |t Springer Nature eBook | |
| 776 | 0 | 8 | |i Printed edition: |z 9783319315706 |
| 776 | 0 | 8 | |i Printed edition: |z 9783319315713 |
| 830 | 0 | |a SpringerBriefs in Materials, |x 2192-1105 | |
| 856 | 4 | 0 | |u https://doi.uam.elogim.com/10.1007/978-3-319-31572-0 |z Texto Completo |
| 912 | |a ZDB-2-CMS | ||
| 912 | |a ZDB-2-SXC | ||
| 950 | |a Chemistry and Materials Science (SpringerNature-11644) | ||
| 950 | |a Chemistry and Material Science (R0) (SpringerNature-43709) | ||